SUD50P04-09L www.vishay.com Vishay Siliconix P-Channel 40 V (D-S), 175 C MOSFET FEATURES TOTO-252 TrenchFET power MOSFETs 175 C junction temperature Drain connected to tab Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S S D G Top View G PRODUCT SUMMARY V (V) -40 DS R max. ( ) at V = -10 V 0.0094 DS(on) GS D R max. ( ) at V = -4.5 V 0.0145 DS(on) GS d I (A) -50 D P-Channel MOSFET Configuration Single ORDERING INFORMATION Package TO-252 Lead (Pb)-free and halogen-free SUD50P04-09L-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -40 DS V Gate-source voltage V 20 GS d T = 25 C -50 C Continuous drain current (T = 175 C) I J D d T = 125 C -50 C A Pulsed drain current I -100 DM Avalanche current I -50 AS a Single avalanche energy L = 0.1 mH E 125 mJ AS c T = 25 C 136 C Power dissipation P W D b, c T = 25 C 3 A Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 10 s 15 18 b Junction-to-ambient R thJA Steady state 40 50 C/W Junction-to-case R 0.82 1.1 thJC Notes a. Duty cycle 1% b. When mounted on 1 square PCB (FR4 material) c. See SOA curve for voltage derating d. Package limited S19-0393-Rev. D, 13-May-2019 Document Number: 72243 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUD50P04-09L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -40 - - DS GS D V Gate threshold voltage V V = V , I = -250 A -1 - -3 GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -32 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I V = -32 V, V = 0 V, T = 125 C - - -50 A DSS DS GS J V = -32 V, V = 0 V, T = 175 C - - -150 DS GS J a On-state drain current I V = -5 V, V = -10 V -50 - - A D(on) DS GS V = -10 V, I = -24 A - 0.0075 0.0094 GS D V = -10 V, I = -50 A, T = 125 C - - 0.0140 GS D J a Drain-source on-state resistance R DS(on) V = -10 V, I = -50 A, T = 175 C - - 0.0170 GS D J V = -4.5 V, I = -18 A - 0.0115 0.0145 GS D a Forward transconductance g V = -5 V, I = -24 A - 73 - S fs DS D b Dynamic Input capacitance C - 4800 - iss Output capacitance C V = 0 V, V = -25 V, f = 1 MHz - 700 - pF oss GS DS Reverse transfer capacitance C - 550 - rss c Total gate charge Q - 102 150 g c Gate-source charge Q V = -20 V, V = -10 V, I = -50 A - 18.5 - nC gs DS GS D c Gate-drain charge Q -27- gd c Turn-on delay time t -10 15 d(on) c Rise time t -60 90 r V = -20 V, R = 0.4 DD L ns c I -50 A, V = -10 V, R = 6 Turn-off delay time t D GEN g - 145 220 d(off) c Fall time t - 140 220 f b Source Drain-Diode Ratings and Characteristics (T = 25 C) C Continuous current I -- -50 S A Pulsed current I -- -100 SM a Forward voltage V I = -50 A, V = 0 V - -1 -1.5 V SD F GS Reverse recovery time t I = -50 A, di/dt = 100 A/s - 55 85 ns rr F Notes a. Pulse test pulse width 300 s, duty cycle 2% b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability S19-0393-Rev. D, 13-May-2019 Document Number: 72243 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000