SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) DS DS(on) D 175 C Junction Temperature 0.052 at V = 10 V 25 GS 150 PWM Optimized 0.060 at V = 6 V 23 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 Primary Side Switch D Drain Connected to Tab GD S G Top View Ordering Information: SUD25N15-52-E3 (Lead (Pb)- free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 150 DS V V Gate-Source Voltage 20 GS T = 25 C 25 C b I Continuous Drain Current (T = 175 C) D J T = 125 C 14.5 C I Pulsed Drain Current 50 A DM I Continuous Source Current (Diode Conduction) 25 S I Avalanche Current 25 AR Repetitive Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH E 31 mJ AR b T = 25 C 136 C Maximum Power Dissipation P W D a T = 25 C 3 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 15 18 a R Junction-to-Ambient thJA Steady State 40 50 C/W Junction-to-Case (Drain) R 0.85 1.1 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See SOA curve for voltage derating. Document Number: 71768 www.vishay.com S09-1501-Rev. D, 10-Aug-09 1SUD25N15-52 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 150 DS GS D V V V = V , I = 250 A Gate Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS I V = 150 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 150 V, V = 0 V, T = 175 C 250 DS GS J b I V = 5 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.042 0.052 GS D V = 10 V, I = 5 A, T = 125 C 0.109 GS D J b R Drain-Source On-State Resistance DS(on) V = 10 V, I = 5 A, T = 175 C 0.145 GS D J V = 6 V, I = 5 A 0.047 0.060 GS D b g V = 15 V, I = 25 A 40 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 1725 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 216 pF oss GS DS C Reverse Transfer Capacitance 100 rss c Q 33 40 Total Gate Charge g c Q V = 75 V, V = 10 V, I = 25 A Gate-Source Charge 9 nC gs DS GS D c Q 12 Gate-Drain Charge gd R Gate Resistance 13 g c t 15 25 Turn-On Delay Time d(on) c t Rise Time V = 50 V, R = 3 70 100 r DD L ns c I 25 A, V = 10 V, R = 2.5 t D GEN g 25 40 Turn-Off Delay Time d(off) c t Fall Time 60 90 f Source-Drain Diode Ratings and Characteristics T = 25 C C I Pulsed Current 50 A SM b V I = 25 A, V = 0 V Diode Forward Voltage 0.9 1.5 V SD F GS t I = 25 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 95 140 ns rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71768 2 S09-1501-Rev. D, 10-Aug-09