X-On Electronics has gained recognition as a prominent supplier of SUD25N15-52-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUD25N15-52-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUD25N15-52-E3 Vishay

Hot SUD25N15-52-E3 electronic component of Vishay
SUD25N15-52-E3 Vishay
SUD25N15-52-E3 MOSFETs
SUD25N15-52-E3  Semiconductors

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Part No. SUD25N15-52-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 150V 25A 136W 52mohm @ 10V
Datasheet: SUD25N15-52-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
51: USD 1.2417 ea
Line Total: USD 63.33 
Availability - 1636
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ: 51  Multiples: 1
Pack Size: 1
Availability Price Quantity
1636
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 33
Multiples : 1
33 : USD 1.9155

143
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ : 1
Multiples : 1
1 : USD 2.9927
10 : USD 2.1768
30 : USD 1.7401
100 : USD 1.5174
500 : USD 1.4161
1000 : USD 1.3726

1139
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 3.0951
10 : USD 1.8338
25 : USD 1.6703
100 : USD 1.4363
500 : USD 1.4363
2000 : USD 1.3831

1636
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 51
Multiples : 1
51 : USD 1.2417
51 : USD 1.2225
52 : USD 1.2034
100 : USD 1.1842
250 : USD 1.1651
500 : USD 1.1019
1000 : USD 1.0834

1940
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 2000
Multiples : 2000
2000 : USD 1.7257

1940
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 2000
Multiples : 2000
2000 : USD 1.4883

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
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Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SUD25N15-52-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUD25N15-52-E3 and other electronic components in the MOSFETs category and beyond.

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SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) DS DS(on) D 175 C Junction Temperature 0.052 at V = 10 V 25 GS 150 PWM Optimized 0.060 at V = 6 V 23 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 Primary Side Switch D Drain Connected to Tab GD S G Top View Ordering Information: SUD25N15-52-E3 (Lead (Pb)- free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 150 DS V V Gate-Source Voltage 20 GS T = 25 C 25 C b I Continuous Drain Current (T = 175 C) D J T = 125 C 14.5 C I Pulsed Drain Current 50 A DM I Continuous Source Current (Diode Conduction) 25 S I Avalanche Current 25 AR Repetitive Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH E 31 mJ AR b T = 25 C 136 C Maximum Power Dissipation P W D a T = 25 C 3 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 15 18 a R Junction-to-Ambient thJA Steady State 40 50 C/W Junction-to-Case (Drain) R 0.85 1.1 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See SOA curve for voltage derating. Document Number: 71768 www.vishay.com S09-1501-Rev. D, 10-Aug-09 1SUD25N15-52 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 150 DS GS D V V V = V , I = 250 A Gate Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS I V = 150 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 150 V, V = 0 V, T = 175 C 250 DS GS J b I V = 5 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.042 0.052 GS D V = 10 V, I = 5 A, T = 125 C 0.109 GS D J b R Drain-Source On-State Resistance DS(on) V = 10 V, I = 5 A, T = 175 C 0.145 GS D J V = 6 V, I = 5 A 0.047 0.060 GS D b g V = 15 V, I = 25 A 40 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 1725 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 216 pF oss GS DS C Reverse Transfer Capacitance 100 rss c Q 33 40 Total Gate Charge g c Q V = 75 V, V = 10 V, I = 25 A Gate-Source Charge 9 nC gs DS GS D c Q 12 Gate-Drain Charge gd R Gate Resistance 13 g c t 15 25 Turn-On Delay Time d(on) c t Rise Time V = 50 V, R = 3 70 100 r DD L ns c I 25 A, V = 10 V, R = 2.5 t D GEN g 25 40 Turn-Off Delay Time d(off) c t Fall Time 60 90 f Source-Drain Diode Ratings and Characteristics T = 25 C C I Pulsed Current 50 A SM b V I = 25 A, V = 0 V Diode Forward Voltage 0.9 1.5 V SD F GS t I = 25 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 95 140 ns rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71768 2 S09-1501-Rev. D, 10-Aug-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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