STY140NS10 STMicroelectronics

STY140NS10 N-CHANNEL 100V - 0.009 - 140A MAX247 MESH OVERLAY POWER MOSFET TYPE V R I DSS DS(on) D STY140NS10 100V <0.011 140A TYPICAL R (on) = 0.009 DS STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced 3 family of power MOSFETs with outstanding 2 1 performances. The new patent pending strip layout coupled with the Companys proprietary edge termination Max247 structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SWITCH MODE POWER SUPPLY (SMPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 100 V DS GS V Drain-gate Voltage (R = 20 k) DGR GS 100 V V Gate- source Voltage 20 V GS I Drain Current (continuos) at T = 25C 140 A D C I Drain Current (continuos) at T = 100C 99 A D C I () Drain Current (pulsed) 560 A DM P Total Dissipation at T = 25C 450 W tot C Derating Factor 3 W/C E (1) Single Pulse Avalanche Energy 2900 mJ AS (2) dv/dt Peak Diode Recovery voltage slope 5 V/ns T Storage Temperature -55 to 175 C stg T Operating Junction Temperature -55 to 175 C j o () Pulse width limited by safe operating area. (1) Starting T = 25 C, I = 70A, V = 50V j D DD (2) I 140A, di/dt 200A/s, V V , T T SD DD (BR)DSS j JMAX. August 2001 1/8 . Obsolete Product(s) - Obsolete Product(s)STY140NS10 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.33 C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 C/W T Maximum Lead Temperature For Soldering Purpose Typ 300 C j ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source Breakdown I = 250 A, V = 0 100 V (BR)DSS D GS Voltage Zero Gate Voltage V = Max Rating 1 A I DS DSS Drain Current (V = 0) GS V = Max Rating T = 125C 10 A DS C Gate-body Leakage V = 20V 100 nA I GS GSS Current (V = 0) DS (1) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V V = V I = 250 A Gate Threshold Voltage 24V GS(th) DS GS D Static Drain-source On V = 10 V I = 70 A 0.009 0.011 R GS D DS(on) Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (*) g Forward Transconductance V = 20 V I = 70 A 50 S fs DS D C Input Capacitance V = 25V, f = 1 MHz, V = 0 12600 pF iss DS GS C Output Capacitance 2100 pF oss Reverse Transfer 690 pF C rss Capacitance 2/8 Obsolete Product(s) - Obsolete Product(s)