X-On Electronics has gained recognition as a prominent supplier of STY130NF20D MOSFETs across the USA, India, Europe, Australia, and various other global locations. STY130NF20D MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STY130NF20D STMicroelectronics

Name: STY130NF20D
Brand: STMicroelectronics
SKU: STY130NF20D_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STY130NF20D electronic component of STMicroelectronics

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Part No.	STY130NF20D
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 200V 0.01 Ohm 130A STripFET II
Datasheet:	STY130NF20D Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

STY130NF20D More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 17.3444 10 : USD 15.7667	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 13.4484 10 : USD 12.2471 25 : USD 11.7312 100 : USD 11.1538 250 : USD 10.6133 500 : USD 10.208 1000 : USD 10.0605 2500 : USD 9.2866	N/A Obsolete

We are delighted to provide the STY130NF20D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STY130NF20D and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STY130NF20D N-channel 200 V, 0.01 typ., 130 A STripFET II with fast recovery diode Power MOSFET in a Max247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STY130NF20D 200 V 0.012 130 A 450 W Exceptional dv/dt capability 100% avalanche tested 3 2 Low gate charge 1 MMax247ax247 Applications Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is produced using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. The device offers extremely fast switching performance thanks to the intrinsic fast body diode, making the device * ideal for hard switching topologies. 6 0 Y Table 1. Device summary Order code Marking Packages Packaging STY130NF20D 130NF20D Max247 Tube May 2014 DocID15300 Rev 4 1/14 This is information on a product in full production. www.st.comContents STY130NF20D Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Revision history . 13 2/14 DocID15300 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 130 A 130 A
Vds - Drain-Source Breakdown Voltage 200 V 200 V
Rds On - Drain-Source Resistance 10 mOhms 10 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Pd - Power Dissipation 450 W 450 W
Mounting Style through hole through hole
Package / Case MAX247 MAX247
Packaging Tube Tube
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 338 nC 338 nC
Configuration single single
Series sty130nf20d sty130nf20d
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 130 A 130 A
Drain-Source Breakdown Voltage 200 V 200 V
Gate-Source Breakdown Voltage 20 V 20 V
Power Dissipation 450 W 450 W
Rds On 10 mohms 10 mohms
Fall Time 250 ns 250 ns
Gate Charge Qg 338 nC 338 nC
Rise Time 218 ns 218 ns
Factory Pack Quantity : 30 30
Typical Turn-Off Delay Time 283 ns 283 ns
Transistor Type 1 n - channel 1 n - channel
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412101 85412101
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000
Typical Turn-On Delay Time 232 ns 232 ns