STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet N-channel 900 V, 1.56 typ., 5.8 A SuperMESH Power MOSFET 2 in D PAK, TO-220, TO-220FP and TO-247 packages Features TAB TAB 3 Order codes V R max. I DS DS(on) D 1 2 3 D PAK TO-220 2 1 STB6NK90ZT4 STP6NK90Z 900 V 2 5.8 A STP6NK90ZFP 3 2 STW7NK90Z 3 1 2 TO-220FP TO-247 1 Extremely high dv/dt capability 100% avalanche tested D(2, TAB) Gate charge minimized Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt Product status capability for the most demanding applications. STB6NK90ZT4 STP6NK90Z STP6NK90ZFP STW7NK90Z DS2985 - Rev 6 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 TO-220FP D PAK, TO-220, TO-247 V Drain-source voltage 900 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 5.8 5.8 A D C (1) I Drain current (continuous) at T = 100 C 3.65 3.65 A D C (2) I Drain current (pulsed) 23.2 23.2 A DM P Total dissipation at T = 25 C 140 30 W TOT C (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from all three V - 2500 V ISO leads to external heat sink (t = 1 s T = 25 C) c T Operating junction temperature range C j -55 to 150 T Storage temperature range C stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 5.8 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 TO-220 TO-220FP TO-247 D PAK R Thermal resistance junction-case 0.89 4.2 0.89 C/W thj-case R Thermal resistance junction-pcb 60 C/W thj-pcb R Thermal resistance junction-ambient 62.5 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 5.8 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 300 mJ AS j D AR DD DS2985 - Rev 6 page 2/26