STW8N90K5 STMicroelectronics

STW8N90K5 N-channel 900 V, 0.60 typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) D STW8N90K5 900 V 0.68 8 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) 3 Ultra-low gate charge 2 100% avalanche tested 1 Zener-protected TO-247 Applications Switching applications Figure 1: Internal schematic diagram Description D(2) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power G(1) density and high efficiency. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STW8N90K5 8N90K5 TO-247 Tube November 2016 DocID030092 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STW8N90K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID030092 Rev 1