NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D4SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance D BV R DSS DS(ON) Max T = +25C C High BV Rating for Power Application DSS 700V 1.5 V = 10V 5.0A GS Low Input Capacitance Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: TO251 (Type HE1) (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Terminal Connections: See Diagram Adaptor Terminals: Finish Matte Tin Annealed over Copper Leadframe. LCD & PDP TV Solderable per MIL-STD-202, Method 208 e3 Lighting Weight: 0.33 grams (Approximate) TO251 (Type HE1) G D S Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMJ70H1D4SV3 TO251 (Type HE1) 75 Pieces / Tube Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D4SV3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 700 V DSS Gate-Source Voltage V 30 V GSS T = +25C 5.0 C A Continuous Drain Current (Note 5) V = 10V I GS D 3.2 T = +100C C Maximum Body Diode Forward Current (Note 6) 3.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 6.0 A I DM Avalanche Current (Note 7) L = 60mH 0.5 A I AS Avalanche Energy (Note 7) L = 60mH E 7.5 mJ AS Peak Diode Recovery dv/dt (Note 7) dv/dt 6 V/ns Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 78 TC = +25C Total Power Dissipation (Note 5) W PD 31 T = +100C C Thermal Resistance, Junction to Ambient (Note 6) 78 R JA C/W Thermal Resistance, Junction to Case (Note 5) 1.8 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 700 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current 1 A I V = 700V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 2 3.4 4 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 1.2 1.5 R V = 10V, I = 1A DS(ON) GS D Diode Forward Voltage 0.85 1.3 V V V = 0V, I =1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 342 C iss V = 50V, f = 1MHz, DS 65 Output Capacitance C pF oss V = 0V GS 0.5 Reverse Transfer Capacitance C rss 4.1 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 7.5 Total Gate Charge Q g V = 560V, I = 3.2A, DD D Gate-Source Charge 1.7 nC Q gs V = 10V GS Gate-Drain Charge 3.0 Q gd Turn-On Delay Time 8 t D(ON) 9 Turn-On Rise Time t V = 350V, V = 10V, R DD GS ns Turn-Off Delay Time 22 t RG = 4.7, ID = 3.2A D(OFF) 5 Turn-Off Fall Time t F Body Diode Reverse Recovery Time 178 ns t RR 223 Body Diode Reverse Recovery Time (T = +150C) t ns J RR I = 3.2A, dI/dt = 100A/s S 1.3 Body Diode Reverse Recovery Charge Q C RR 1.8 Body Diode Reverse Recovery Charge (T = +150C) Q C J RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 6 June 2018 DMJ70H1D4SV3 Diodes Incorporated www.diodes.com Document number: DS39417 Rev. 4 - 3 NEW PRODUCT