TC6321 N- and P-Channel Enhancement-Mode MOSFET Pair Features Description Integrated Gate-to-Source Resistor The TC6321 consists of high-voltage, low-threshold N-channel and P-channel MOSFETs in an 8-Lead Integrated Gate-to-Source Zener Diode VDFN package. Both MOSFETs have integrated Low Threshold gate-to-source resistors and gate-to-source Low On-Resistance Zener diode clamps, which are desired for high-voltage Low Input Capacitance pulser applications. Fast Switching Speeds The TC6321 is a complimentary, high-speed, Free from Secondary Breakdown high-voltage, gate-clamped N- and P-channel Low Input and Output Leakage MOSFET pair, which utilizes an advanced vertical DMOS structure and the well-proven silicon-gate Independent, Electrically Isolated N- and manufacturing process. This combination produces a P-Channels device with the power-handling capabilities of bipolar 8-Lead Very Thin Plastic Dual Flat, No Lead, transistors and with the high-input impedance and 6x 5mm VDFN Package positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this Applications device is free from thermal runaway and thermally- induced secondary breakdown. High-Voltage Pulser Amplifiers Vertical DMOS FETs are ideally suited to a wide range Buffers of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input Piezoelectric Transducer Drivers impedance, low input capacitance and fast switching General-Purpose Line Drivers speeds are desired. Logic-Level Interfaces Package Types TC6321 6x 5 VDFN* 8 DN SN 1 GN 2 7 DN GP 3 6 DP 4 5 DP SP * Includes Dual Exposed Thermal Pads (EP) see Table 3-1. 2017 Microchip Technology Inc. DS20005724A-page 1TC6321 Typical Application Circuit +100V V DD VH OE 10 nF INA INB 10 nF V VL SS TC6321 MD12XX, MD17XX, -100V MD18XX Functional Block Diagram SN DN GN DN N-Channel P-Channel GP DP SP DP DS20005724A-page 2 2017 Microchip Technology Inc.