STW9N150 STMicroelectronics

STW9N150 N-channel 1500 V - 1.8 - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type V R I Pw DSS DS(on) D STW9N150 1500 V < 2.5 8 A 320 W 100% avalanche tested Avalanche ruggedness 3 2 Gate charge minimized 1 Very low intrinsic capacitances TO-247 High speed switching Very low on-resistance Application Switching applications Figure 1. Internal schematic diagram Description Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest R per area, unrivalled gate charge and DS(on) switching characteristics. Table 1. Device summary Order code Marking Package Packaging STW9N150 9N150 TO-247 Tube January 2008 Rev 2 1/12 www.st.com 12Contents STW9N150 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 5 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12