STW8N120K5 STMicroelectronics

STW8N120K5 Datasheet N-channel 1200 V, 1.65 typ., 6 A, MDmesh K5 Power MOSFET in a TO-247 package Features Order code V R max. I P DS DS(on) D TOT STW8N120K5 1200 V 2.00 6 A 130 W Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 2 1 Ultra-low gate charge 100% avalanche tested TO-247 Zener-protected D(2) Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications S(3) requiring superior power density and high efficiency. AM01476v1 No tab Product status link STW8N120K5 Product summary Order code STW8N120K5 Marking 8N120K5 Package TO-247 Packing Tube DS12549 - Rev 3 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW8N120K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 6 A C I D Drain current (continuous) at T = 100 C 3.5 A C (1) I Drain current pulsed 12 A DM P Total dissipation at T = 25 C 130 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 6 A, di/dt 100 A/s, V peak V SD DS (BR)DSS 3. V 960 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.96 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 1.7 A AR (pulse width limited by T ) jmax Single-pulse avalanche energy E 415 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AR DD DS12549 - Rev 3 page 2/13