X-On Electronics has gained recognition as a prominent supplier of STW8N120K5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW8N120K5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW8N120K5 STMicroelectronics

STW8N120K5 electronic component of STMicroelectronics
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See Product Specifications
Part No.STW8N120K5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: N-CHANNEL 1200 V, 0.62 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-3PF PACKAGE
Datasheet: STW8N120K5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
600: USD 4.4096 ea
Line Total: USD 2645.76 
Availability - 0
MOQ: 600  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 600
Multiples : 1
600 : USD 4.654

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 600
Multiples : 1
600 : USD 4.4096

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 600
Multiples : 600
600 : USD 5.4495

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 30
Multiples : 30
30 : USD 5.4495

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 9.8875
10 : USD 6.4964
25 : USD 6.1972
100 : USD 5.3852
500 : USD 4.6907

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 9.898
3 : USD 6.734
7 : USD 6.37

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
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Product Type
Rise Time
Factory Pack Quantity :
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STW8N120K5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW8N120K5 and other electronic components in the MOSFETs category and beyond.

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STW8N120K5 Datasheet N-channel 1200 V, 1.65 typ., 6 A, MDmesh K5 Power MOSFET in a TO-247 package Features Order code V R max. I P DS DS(on) D TOT STW8N120K5 1200 V 2.00 6 A 130 W Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 2 1 Ultra-low gate charge 100% avalanche tested TO-247 Zener-protected D(2) Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications S(3) requiring superior power density and high efficiency. AM01476v1 No tab Product status link STW8N120K5 Product summary Order code STW8N120K5 Marking 8N120K5 Package TO-247 Packing Tube DS12549 - Rev 3 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW8N120K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 6 A C I D Drain current (continuous) at T = 100 C 3.5 A C (1) I Drain current pulsed 12 A DM P Total dissipation at T = 25 C 130 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 6 A, di/dt 100 A/s, V peak V SD DS (BR)DSS 3. V 960 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.96 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 1.7 A AR (pulse width limited by T ) jmax Single-pulse avalanche energy E 415 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AR DD DS12549 - Rev 3 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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