X-On Electronics has gained recognition as a prominent supplier of DMP3056LDMQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP3056LDMQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP3056LDMQ-7 Diodes Incorporated

DMP3056LDMQ-7 electronic component of Diodes Incorporated
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Part No.DMP3056LDMQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
Datasheet: DMP3056LDMQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.164 ea
Line Total: USD 492 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.164

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 3
Multiples : 1
3 : USD 0.364
25 : USD 0.2632
85 : USD 0.1918
232 : USD 0.1806

   
Manufacturer
Product Category
Mounting
Kind Of Package
Kind Of Channel
Case
Features Of Semiconductor Devices
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the DMP3056LDMQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP3056LDMQ-7 and other electronic components in the MOSFETs category and beyond.

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D S D D G D DMP3056LDM P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Threshold Voltage I D BV R DSS DS(ON) MAX Low On-Resistance T = +25C A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -4.3A 45m V = -10V GS -30V Halogen and Antimony Free. Green Device (Note 3) 65m V = -4.5V -3.3A GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Case: SOT26 applications. Case Material Molded Plastic, Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 General Purpose Interfacing Switch Terminal Connections: See Diagram Power Management Functions Weight: 0.016 grams (Approximate) Analog Switch SOT26 Top View Top View Internal Schematic Ordering Information (Note 5) Part Number Qualification Case Packaging DMP3056LDM-7 Commercial SOT26 3000/Tape & Reel DMP3056LDMQ-7 Automotive SOT26 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3056LDM Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -30 V V DSS Gate-Source Voltage V V 20 GSS Steady State -4.3 A T = +25C I A D Continuous Drain Current (Note 7) V = -10V GS t < 10s T = +25C I -5.8 A A D Maximum Continuous Body Diode Forward Current (Note 7) I -2.3 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -13 A DM Thermal Characteristics Characteristic Symbol Value Unit 1.25 W Total Power Dissipation (Note 6) T = +25C P A D R 100 C/W Thermal Resistance, Junction to Ambient (Note 6) Steady State JA 1.5 W Total Power Dissipation (Note 7) T = +25C P A D Thermal Resistance, Junction to Ambient (Note 7) Steady State R 86 JA C/W 15.6 Thermal Resistance, Junction to Case R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition STATIC PARAMETERS (Note 8) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D -1 Zero Gate Voltage Drain Current T = +25C I A V = 0V, V = -30V J DSS GS DS 100 V = 20V, V = 0V GS DS Gate-Body Leakage Current nA I GSS 800 V = 25V, V = 0V GS DS Gate Threshold Voltage V -1.0 -2.1 V V = V , I = -250A GS(TH) GS DS D 45 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS(ON) 65 V = -4.5V, I = -4.2A GS D Forward Transconductance 8 s g V = -10V, I = -4.3A FS DS D Diode Forward Voltage -1.2 V V V = 0V, I = -1.7A SD GS S DYNAMIC PARAMETERS (Note 9) Input Capacitance C 948 pF iss V = 0V, V = -25V, GS DS Output Capacitance C 105 pF oss f = 1.0MHz Reverse Transfer Capacitance C 100 pF rss SWITCHING CHARACTERISTICS (Note 9) V = -15V, V = -4.5V, DS GS Q 10.1 nC g Total Gate Charge I = -6A D 21.1 Q g V = -15V, V = -10V, DS GS Gate-Source Charge 2.8 nC Q gs I = -6A D Gate-Drain Charge 3.2 Q gd Gate Resistance 13.15 R V = 0V, V = 0V, f = 1MHz g DS GS Turn-On Delay Time t 10.2 D(ON) Rise Time t 6.6 R V = -15V, V = -10V, DS GS ns Turn-Off Delay Time t 50.1 I = -1A, R = 6.0 D(OFF) D g Fall Time t 22.3 F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMP3056LDM November 2016 Diodes Incorporated www.diodes.com Document number: DS31449 Rev. 12 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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