D S D D G D DMP3056LDM P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Threshold Voltage I D BV R DSS DS(ON) MAX Low On-Resistance T = +25C A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -4.3A 45m V = -10V GS -30V Halogen and Antimony Free. Green Device (Note 3) 65m V = -4.5V -3.3A GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Case: SOT26 applications. Case Material Molded Plastic, Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 General Purpose Interfacing Switch Terminal Connections: See Diagram Power Management Functions Weight: 0.016 grams (Approximate) Analog Switch SOT26 Top View Top View Internal Schematic Ordering Information (Note 5) Part Number Qualification Case Packaging DMP3056LDM-7 Commercial SOT26 3000/Tape & Reel DMP3056LDMQ-7 Automotive SOT26 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3056LDM Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -30 V V DSS Gate-Source Voltage V V 20 GSS Steady State -4.3 A T = +25C I A D Continuous Drain Current (Note 7) V = -10V GS t < 10s T = +25C I -5.8 A A D Maximum Continuous Body Diode Forward Current (Note 7) I -2.3 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -13 A DM Thermal Characteristics Characteristic Symbol Value Unit 1.25 W Total Power Dissipation (Note 6) T = +25C P A D R 100 C/W Thermal Resistance, Junction to Ambient (Note 6) Steady State JA 1.5 W Total Power Dissipation (Note 7) T = +25C P A D Thermal Resistance, Junction to Ambient (Note 7) Steady State R 86 JA C/W 15.6 Thermal Resistance, Junction to Case R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition STATIC PARAMETERS (Note 8) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D -1 Zero Gate Voltage Drain Current T = +25C I A V = 0V, V = -30V J DSS GS DS 100 V = 20V, V = 0V GS DS Gate-Body Leakage Current nA I GSS 800 V = 25V, V = 0V GS DS Gate Threshold Voltage V -1.0 -2.1 V V = V , I = -250A GS(TH) GS DS D 45 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS(ON) 65 V = -4.5V, I = -4.2A GS D Forward Transconductance 8 s g V = -10V, I = -4.3A FS DS D Diode Forward Voltage -1.2 V V V = 0V, I = -1.7A SD GS S DYNAMIC PARAMETERS (Note 9) Input Capacitance C 948 pF iss V = 0V, V = -25V, GS DS Output Capacitance C 105 pF oss f = 1.0MHz Reverse Transfer Capacitance C 100 pF rss SWITCHING CHARACTERISTICS (Note 9) V = -15V, V = -4.5V, DS GS Q 10.1 nC g Total Gate Charge I = -6A D 21.1 Q g V = -15V, V = -10V, DS GS Gate-Source Charge 2.8 nC Q gs I = -6A D Gate-Drain Charge 3.2 Q gd Gate Resistance 13.15 R V = 0V, V = 0V, f = 1MHz g DS GS Turn-On Delay Time t 10.2 D(ON) Rise Time t 6.6 R V = -15V, V = -10V, DS GS ns Turn-Off Delay Time t 50.1 I = -1A, R = 6.0 D(OFF) D g Fall Time t 22.3 F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMP3056LDM November 2016 Diodes Incorporated www.diodes.com Document number: DS31449 Rev. 12 - 2