AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance V 40V DSS 175C Operating Temperature R typ.2.1m DS(on) Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant G I 185A D (Silicon Limited) Automotive Qualified * I 120A D S (Package Limited) Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon D area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make S D this design an extremely efficient and reliable device for use G in Automotive applications and wide variety of other applications. TO-220AB Applications AUIRFB8405 Electric Power Steering (EPS) Battery Switch GD S Start/Stop Micro Hybrid Gate Drain Source Heavy Loads DC-DC Applications Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRFB8405 TO-220 Tube 50 AUIRFB8405 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 185 D C GS 131 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A 120 I T = 25C Continuous Drain Current, V 10V (Package Limited) D C GS 904 I Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 163 W D C Linear Derating Factor 1.1 W/C V Gate-to-Source Voltage 20 V GS -55 to + 175 T Operating Junction and J C T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRFB8405 Avalanche Characteristics Single Pulse Avalanche Energy E 181 AS (Thermally limited) mJ E Single Pulse Avalanche Energy Tested Value 247 AS (tested) Avalanche Current I See Fig. 14, 15, 24a, 24b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.92 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250 A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.026 V/C Reference to 25C, I = 1.0mA (BR)DSS J D R Static Drain-to-Source On-Resistance 2.1 2.5 m V = 10V, I = 100A DS(on) GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100 A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 V = 40V, V = 0V DSS DS GS A 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.3 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 100 S V = 10V, I = 100A DS D Q Total Gate Charge 107 161 I = 100A g D Q Gate-to-Source Charge 29 V =20V gs DS nC Q Gate-to-Drain Mille) Charge 39 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 68 I = 100A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 14 V = 26V d(on) DD t Rise Time 128 I = 100A r D ns t Turn-Off Delay Time 55 R = 2.7 d(off) G t Fall Time 77 V = 10V f GS C Input Capacitance 5193 V = 0V iss GS C Output Capacitance 754 V = 25V oss DS C Reverse Transfer Capacitance 519 pF = 1.0 MHz, See Fig. 5 rss C eff. (ER) Effective Output Capacitance (Energy Related) 878 V = 0V, V = 0V to 32V , See Fig. 11 oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 1225 V = 0V, V = 0V to 32V oss GS DS www.irf.com 2013 International Rectifier April 30, 2013 2