HEXFET Power MOSFET V 20 V DS R DS(on) max 0.99 m ( V = 4.5V) GS ( V = 2.5V) 1.50 GS Q 155 nC g (typical) R 1.3 G (typical) I D 100 A ( T = 25C) mb PQFN 5X6 mm Applications Features Benefits Low R ( 0.99m) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 0.8C/W) Enable better thermal dissipation Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Easier Manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier RoHS Compliant, Halogen-Free Standard Pack Base Part Number Package Type Orderable part number Note Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 IRFH6200TRPbF IRFH6200PbF PQFN 5mm x 6mm Tape and Reel 400 IRFH6200TR2PbF EOL Notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 20 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 4.5V 49 D A GS I T = 70C Continuous Drain Current, V 4.5V 40 D A GS I T = 25C Continuous Drain Current, V 4.5V 100 A D mb GS T = 100C Continuous Drain Current, V 4.5V 100 I D mb GS I Pulsed Drain Current 400 DM P T = 25C Power Dissipation 3.6 D A W P T = 25C Power Dissipation 156 D mb Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 % & ( Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 6.4 mV/C Reference to 25C, I = 1mA DSS J D 0.75 0.95 V = 10V, I = 50A GS D R Static Drain-to-Source On-Resistance m DS(on) 0.80 0.99 V = 4.5V, I = 50A GS D 1.10 1.50 V = 2.5V, I = 50A GS D V Gate Threshold Voltage 0.5 0.8 1.1 V GS(th) V = V , I = 150A DS GS D V Gate Threshold Voltage Coefficient -6.6 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 16V, V = 0V DSS DS GS A 150 V = 16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS gfs Forward Transconductance 260 S V = 10V, I = 50A DS D Q Total Gate Charge 155 230 V = 10V g DS nC Q Gate-to-Source Charge 22 V = 4.5V gs GS Q Gate-to-Drain Charge 53 I = 50A (See Fig.17 & 18) gd D R Gate Resistance 1.3 G t Turn-On Delay Time 14 V = 10V, V = 4.5V d(on) DD GS t Rise Time 74 I = 50A r D ns t Turn-Off Delay Time 140 R =1.0 d(off) G t Fall Time 160 See Fig.15 f C Input Capacitance 10890 V = 0V iss GS pF C Output Capacitance 2890 V = 10V oss DS C Reverse Transfer Capacitance 2180 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 780 mJ AS I Avalanche Current 30 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.2 V T = 25C, I = 50A, V = 0V J S GS t Reverse Recovery Time 86 130 ns T = 25C, I = 50A, V = 10V rr DD J F Q Reverse Recovery Charge 350 525 nC di/dt = 260A/ s rr Thermal Resistance Parameter Typ. Max. Units R Junction-to-Mounting Base 0.5 0.8 JC-mb Junction-to-Case R (Top) 15 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA % & (