AUTOMOTIVE GRADE AUIRF6215S Features Advanced Planar Technology V -150V DSS Low On-Resistance P-Channel MOSFET R max. DS(on) 0.29 Dynamic dv/dt Rating 175C Operating Temperature I -13A D Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S G Description 2 D Pak Specifically designed for Automotive applications, this cellular design of AUIRF6215S HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the G D S fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely Gate Drain Source efficient and reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 50 AUIRF6215S 2 AUIRF6215S D -Pak Tape and Reel Left 800 AUIRF6215STRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -13 D C GS I T = 100C Continuous Drain Current, V -10V -9.0 A D C GS I Pulsed Drain Current -44 DM P T = 25C Maximum Power Dissipation 3.8 D A W P T = 25C Maximum Power Dissipation 110 D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 310 AS mJ I Avalanche Current -6.6 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery -5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.4 R JC C/W Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 Rev. 2.3, 2020-12-17 AUIRF6215S Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -150 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient -0.20 V/C Reference to 25C, I = -1mA V / T D (BR)DSS J 0.29 V = -10V, I = -6.6A GS D R Static Drain-to-Source On-Resistance DS(on) 0.58 V = -10V, I = -6.6A,T =150C GS D J V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Trans conductance 3.6 S V = -25V, I = -6.6A fs DS D -25 V = -150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -120V,V = 0V,T =150C DS GS J I Gate-to-Source Forward Leakage -100 V = -20V GSS GS nA Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 66 I = -6.6A g D Q Gate-to-Source Charge 8.1 nC V = -120V gs DS Q Gate-to-Drain Charge 35 V = -10V gd GS t Turn-On Delay Time 14 V = -75V d(on) DD t Rise Time 36 I = -6.6A r D ns t Turn-Off Delay Time 53 R = 6.8 d(off) G t Fall Time 37 R = 12 f D Between lead,6mm (0.25in.) L Internal Source Inductance 7.5 nH from package and center S of die contact C Input Capacitance 860 V = 0V iss GS C Output Capacitance 220 V = -25V oss pF DS C Reverse Transfer Capacitance 130 = 1.0MHz, See Fig.5 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -11 S (Body Diode) showing the A Pulsed Source Current integral reverse I -44 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.6 V T = 25C,I = -6.6A,V = 0V SD J S GS t Reverse Recovery Time 160 240 ns T = 25C ,I = -6.6A rr J F Q Reverse Recovery Charge 1.2 1.7 C di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) Limited by T starting T = 25C, L = 14mH, R = 25, I = -6.6A. (See fig.12) Jmax, J G AS I -6.6A, di/dt 620A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T of approximately 90C J 2 Rev. 2.3, 2020-12-17