PD - 90397G IRFG9110 JANTX2N7335 JANTXV2N7335 REF:MIL-PRF-19500/599 POWER MOSFET 100V, QUAD P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG9110 1.4 -0.75A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The MO-036AB efficient geometry design achieves very low on-state resis- tance combined with high transconductance. HEXFET tran- sistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, Features: ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistors totally isolated package eliminates the Dynamic dv/dt Rating need for additional isolating material between the device Light-weight and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = -10V, T = 25C Continuous Drain Current -0.75 D GS C A I V = -10V, T = 100C Continuous Drain Current -0.5 D GS C I Pulsed Drain Current -3.0 DM P T = 25C Max. Power Dissipation 1.4 W D C Linear Derating Factor 0.011 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 75 mJ AS I Avalanche Current A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt -5.5 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s) Weight 1.3 (typical) g For footnotes refer to the last page www.irf.com 1 04/16/02IRFG9110 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown -0.098 V/C Reference to 25C, I = -1.0mA DSS J D Voltage R Static Drain-to-Source On-State 1.4 V = -10V, I = -0.5A DS(on) GS D Resistance 1.73 V = -10V, I = -0.75A GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 0.67 S ( ) V > -15V, I = -0.5A fs DS DS I Zero Gate Voltage Drain Current -25 V = -80V, V = 0V DSS DS GS A -250 V = -80V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward -100 V = -20V GSS GS nA I Gate-to-Source Leakage Reverse 100 V =20V GSS GS Q Total Gate Charge 15 V = -10V, ID -0.75A g GS = Q Gate-to-Source Charge 7.0 nC V = -50V gs DS Q Gate-to-Drain (Miller) Charge 8.0 gd t Turn-On Delay Time 30 V = -50V, I = -0.75A d(on) DD D t Rise Time 60 V = -10V, R =7.5 r GS G ns t Turn-Off Delay Time 40 d(off) t Fall Time 40 f L L Total Inductance 10 nH Measured from drain lead (6mm/ S + D 0.25in. from package) to source lead (6mm/0.25in. from package) C Input Capacitance 200 V = 0V, V = -25V iss GS DS C Output Capacitance 85 pF f = 1.0MHz oss C Reverse Transfer Capacitance 30 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) -0.75 S A I Pulse Source Current (Body Diode) -3.0 SM V Diode Forward Voltage -5.5 V T = 25C, I = -0.75A, V = 0V j S GS SD t Reverse Recovery Time 200 nS T = 25C, I = -0.75A, di/dt -100A/ s rr j F Q Reverse Recovery Charge 9.0 c V -50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 17 thJC C/W R Junction to Ambient 90 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com