HEXFET Power MOSFET V 60 V DS R DS(on) max 14.4 m ( V = 10V) GS Q 21 g (typical) nC R 1.1 G (typical) I D PQFN 5X6 mm 40 A ( T = 25C) c(Bottom) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 14.4 m) Lower Conduction Losses Low Thermal Resistance to PCB (< 2.7C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFH5406TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5406TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 60 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 11 D A GS I T = 70C Continuous Drain Current, V 10V 9 D A GS I T = 25C Continuous Drain Current, V 10V 40 A D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 25 D C(Bottom) GS Pulsed Drain Current I 160 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 46 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250uA DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 11.4 14.4 V = 10V, I = 24A m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 50 A DS GS D V Gate Threshold Voltage Coefficient -8.6 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A = 60V, V = 0V, T = 125C 250 V DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 27 S V = 25V, I = 24A DS D Q Total Gate Charge 21 32 g Q Pre-Vth Gate-to-Source Charge 3.6 V = 30V gs1 DS Q Post-Vth Gate-to-Source Charge 1.9 V = 10V gs2 GS nC Q Gate-to-Drain Charge 6.5 I = 24A gd D Q Gate Charge Overdrive 9 godr Q Switch Charge (Q + Q ) 8.4 sw gs2 gd Q Output Charge 7.4 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.1 G t Turn-On Delay Time 5.4 V = 30V, V = 10V d(on) DD GS t Rise Time 8.7 I = 24A r D ns t Turn-Off Delay Time 12 R =1.7 d(off) G t Fall Time 3.5 f C Input Capacitance 1256 V = 0V iss GS C Output Capacitance 206 = 25V pF V oss DS C Reverse Transfer Capacitance 92 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 45 mJ AS Avalanche Current I 24 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 40 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 160 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 24A, V = 0V SD J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 24A, V = 30V rr J F DD Q di/dt = 500A/s Reverse Recovery Charge 74 111 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 2.7 JC Junction-to-Case R (Top) 15 JC C/W Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA