STY60NM50 N-CHANNEL 500V - 0.045 - 60A Max247 Zener-Protected MDmeshPower MOSFET TYPE V R I DSS DS(on) D STY60NM50 500V < 0.05 60 A TYPICAL R (on) = 0.045 DS HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE 3 CHARGE 2 1 LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL Max247 INDUSTRYS LOWEST ON-RESISTANCE DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Companys PowerMESH horizontal layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V =0) 500 V DS GS V Drain-gate Voltage (R =20k) 500 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 60 A D C I Drain Current (continuous) at T = 100C 37.8 A D C I ( ) Drain Current (pulsed) 240 A DM P Total Dissipation at T = 25C 560 W TOT C V Gate source ESD(HBM-C=100pF, R=15K) 6KV ESD(G-S) Derating Factor 4.5 W/C dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns T Storage Temperature 65 to 150 C stg T Max. Operating Junction Temperature 150 C j ()Pulse width limited by safe operating area (1)I 60A, di/dt 400A/s, V V ,T T SD DD (BR)DSS j JMAX November 2003 1/8STY60NM50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.22 C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 30 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 1.4 J AS (starting T = 25 C, I =I ,V =35V) j D AR DD ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 500 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V = Max Rating 10 A DSS DS Drain Current (V =0) GS V = Max Rating, T = 125 C 100 A DS C I Gate-body Leakage V = 20V 10 A GSS GS Current (V =0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V =V ,I = 250A 345 V GS(th) DS GS D R Static Drain-source On V =10V, I =30A 0.045 0.05 DS(on) GS D Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (1) Forward Transconductance V >I xR 35 S fs DS D(on) DS(on)max, I = 30A D C Input Capacitance V = 25V,f= 1MHz,V =0 7500 pF iss DS GS C Output Capacitance 980 pF oss C Reverse Transfer 200 pF rss Capacitance R Gate Input Resistance f=1 MHz Gate DC Bias = 0 1.5 G Test Signal Level = 20mV Open Drain Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2/8