Product Information

STY112N65M5

STY112N65M5 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 650V; 61A; 625W; MAX247
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 30.68 ea
Line Total: USD 30.68

3 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

STY112N65M5
STMicroelectronics

1 : USD 30.68
4 : USD 30.68
20 : USD 30.68
40 : USD 30.68
125 : USD 30.68

403 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

STY112N65M5
STMicroelectronics

1 : USD 35.505
10 : USD 33.585
25 : USD 32.5739
50 : USD 31.9224

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Kind Of Package
LoadingGif

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Additional Infomation About Product

STY112N65M5 N-channel 650 V, 0.019 , 96 A, MDmesh V Power MOSFET in Max247 package Datasheet production data Features V DSS Order code R max I DS(on) D T jMAX STY112N65M5 710 V < 0.022 96 A Higher V rating DSS Higher dv/dt capability 3 2 Excellent switching performance 1 Easy to drive Max247 100% avalanche tested Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior 3 power density and outstanding efficiency. - V Table 1. Device summary Order code Marking Package Packaging STY112N65M5 112N65M5 Max247 Tube May 2012 Doc ID 15321 Rev 3 1/ This is information on a product in full production. www.st.com 12Contents STY112N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/ Doc ID 15321 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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