SUD06N10-225L Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET PRODUCT SUMMARY V (V) r ( ) I (A) Q (Typ) DS DS(on) D g 0.200 V = 10 V 6.5 GS 100100 272.7 0.225 V = 4.5 V 6.0 GS TO-252 D G Drain Connected to Tab GD S Top View S Order Number: SUD06N10-225L N-Channel MOSFET SUD06N10-225LE3 (lLead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS VV Gate-Source Voltage V 20 GS T = 25 C 6.5 C bb Continuous Drain Current (TContinuous Drain Current (T = 175 = 175 C)C) II JJ DD T = 125 C 3.75 C Pulsed Drain Current I 8.0 A DM Continuous Source Current (Diode Conduction) I 6.5 S Avalanche Current I 5.0 AR Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH E 1.25 mJ AR b T = 25 C 20 C Maximum Power DissipationMaximum Power Dissipation PP WW D a T = 25 C 1.5 A Operating Junction and Storage Temperature Range T , T 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 40 50 aa Junction-to-AmbientJti tAbi t RR thJA Steady State 80 100 C/WC/W Junction-to-Case R 6.0 7.5 thJC Notes a. Surface Mounted on 1 x1 FR4 Board. b. See SOA curve for voltage derating. Document Number: 71253 www.vishay.com S42350Rev. B, 20-Dec-04 1SUD06N10-225L Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J a Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 GS D (BR)DSS VV Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 GS(th) DS GS D V = 0 V, V = 20 V Gate-Body Leakage I 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS V = 100 V, V = 0 V, T = 125 C 50 Zero Gate Voltage Drain Currentg I A DS GS J DSDSSS V = 100 V, V = 0 V, T = 175 C 250 DS GS J b On-State Drain Current I V = 5 V, V = 10 V 8.0 A D(on) DS GS V = 10 V, I = 3 A 0.160 0.200 GS D V = 10 V, I = 3 A, T = 125 C 0.350 GS D J bb Drain-Source On-State ResistanceDrain Source On State Resistance rr DSDS((on)) V = 10 V, I = 3 A, T = 175 C 0.450 GS D J V = 4.5 V, I = 1.0 A 0.180 0.225 GS D b Forward Transconductance g V = 15 V, I = 3 A 8.5 S fs DS D a Dynamic Input Capacitance C 240 iss Output Capacitance C V = 0 V, V = 25 V, F = 1 MHz 42 pF oss GS DS Reverse Transfer Capacitance C 17 rss c Total Gate Charge Q 2.7 4.0 g c Gate-Source Charge Q 0.6 gs V = 50 V,, V = 5 V,, I = 6.5 A nC DSDS GSGS DD c Gate-Drain Charge Q 0.7 gd c Turn-On Delay Time t 7 11 d(on) c Rise Time t 8 12 r VV = 50 V = 50 V,, R R = 7 = 7.5 .5 DDDD LL nsns c I 6.5 A, V = 10 V, R = 2.5 D GEN g Turn-Off Delay Time t 8 12 d(off) c Fall Time t 9 14 f Source-Drain Diode Ratings and Characteristic (T = 25 C) C Pulsed Current I 8.0 A SM b Diode Forward Voltage V I = 6.5 A, V = 0 V 0.9 1.3 V SD F GS Source-Drain Reverse Recovery Time t I = 6.5 A, di/dt = 100 A/ s 35 60 ns rr F Notes a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2%. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 71253 www.vishay.com S42350Rev. B, 20-Dec-04 2