SUD08P06-155L-GE3 www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES DPADPAK (TO-252)K ( TrenchFET power MOSFETs Material categorization: Drain connected to tab for definitions of compliance please see www.vishay.com/doc 99912 S S D G G Top View PRODUCT SUMMARY V (V) -60 DS R max. ( ) at V = -10 V 0.155 DS(on) GS D R max. ( ) at V = -4.5 V 0.280 DS(on) GS Q typ. (nC) 12.5 P-Channel MOSFET g I (A) -8.4 D Configuration Single ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SUD08P06-155L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Gate-source voltage V 20 V GS T = 25 C -8.2 C Continuous drain current (T = 150 C) I J D T = 100 C -5.2 C Pulsed drain current I -18 A DM Continuing source current (diode conduction) I -8.4 S Avalanche current I -12 AS Single pulse avalanche energy L = 0.1 mH E 7.2 mJ AS a T = 25 C 20.8 C Maximum power dissipation P W D b T = 25 C 1.7 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 10 s 20 25 b Junction-to-ambient R thJA Steady state 62 75 C/W Junction-to-case R 56 thJC Notes a. See SOA curve for voltage derating b. Surface mounted on 1 x 1 FR-4 board S13-0788-Rev. A, 15-Apr-13 Document Number: 62843 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUD08P06-155L-GE3 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -60 - - DS GS D V Gate threshold voltage V V = V , I = -250 A -1 -2 - GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -60 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I V = -60 V, V = 0 V, T = 125 C - - -50 A DSS DS GS J V = -60 V, V = 0 V, T = 150 C - - -150 DS GS J b On-state drain current I V = -5 V, V = -10 V -10 - - A D(on) DS GS V = -10 V, I = -5 A - 0.125 0.155 GS D V = -10 V, I = -5 A, T = 125 C - - 0.280 GS D J b Drain-source on-state resistance R DS(on) V = -10 V, I = -5 A, T = 150 C - - 0.350 GS D J V = -4.5 V, I = -2 A - 0.158 0.280 GS D b Forward transconductance g V = -15 V, I = -5 A - 8 - S fs DS D Dynamic Input capacitance C - 450 - iss Output capacitance C V = -25 V, V = 0 V, f = 1 MHz -65- pF oss DS GS Reverse transfer capacitance C -40- rss Total gate charge Q - 12.5 19 g Gate-source charge Q V = -30 V, V = -10 V, I = -8.4 A -2.3 - nC gs DS GS D Gate-drain charge Q -3.2 - gd Gate resistance R f = 1 MHz - 8 - g c Turn-on delay time t -5 10 d(on) c Rise time t -14 25 r V = -30 V, R = 3.57 DD L ns c I -8.4 A, V = -10 V, R = 2.5 Turn-off delay time t -1D GEN g 525 d(off) c Fall time t -7 12 f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C Pulsed current I -- -20 A SM b Forward voltage V I = -2 A, V = 0 V - -0.9 -1.3 V SD F GS Reverse recovery time t -50 80 ns rr I = -8 A, di/dt = 100 A/s F Reverse recovery time Q - 80 120 nC rr Notes a. Guaranteed by design, not subject to production testing b. Pulse test pulse width 300 s, duty cycle 2 % c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0788-Rev. A, 15-Apr-13 Document Number: 62843 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000