SUD17N25-165 www.vishay.com Vishay Siliconix N-Channel 250-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) R ()I (A) DS DS(on) D 175 C junction temperature 250 0.165 at V = 10 V 17 GS Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-252TO Drain connected to tab D G S D N-Channel MOSFET G S Top View Ordering Information: SUD17N25-165-E3 (lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 250 DS V 20 Gate-Source Voltage V GS T = 25 C 17 C b Continuous Drain Current (T = 175 C) I J D T = 125 C 9.8 C Pulsed Drain Current I 20 A DM Continuous Source Current (Diode Conduction) I 17 S Single Pulse Avalanche Current I 4 AS Single Pulse Avalanche Energy L = 0.3 mH E 2.4 mJ AS b T = 25 C 136 C Maximum Power Dissipation P W D a T = 25 C 3 A Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 10 s 15 18 a Junction-to-Ambient R thJA Steady State 40 50 C/W Junction-to-Case (Drain) R 0.85 1.1 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. See SOA curve for voltage derating. S14-2530-Rev. C, 29-Dec-14 Document Number: 72851 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD17N25-165 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 250 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2.5 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 250 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I V = 250 V, V = 0 V, T = 125 C - - 50 A DSS DS GS J V = 250 V, V = 0 V, T = 175 C - - 250 DS GS J b On-State Drain Current I V = 15 V, V = 10 V 17 - - A D(on) DS GS V = 10 V, I = 14 A - 0.131 0.165 GS D b Drain-Source On-State Resistance R V = 10 V, I = 14 A, T = 125 C - - 0.347 DS(on) GS D J V = 10 V, I = 14 A, T = 175 C - - 0.462 GS D J b Forward Transconductance g V = 15 V, I = 17 A - 36 - S fs DS D a Dynamic Input Capacitance C - 1950 - iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz - 160 - pF oss GS DS Reverse Transfer Capacitance C -70- rss c Total Gate Charge Q -30 42 g c Gate-Source Charge Q V = 125 V, V = 10 V, I = 17 A -10- nC gs DS GS D c Gate-Drain Charge Q -10- gd Gate Resistance R -1.6 - g c Turn-On Delay Time t -15 25 d(on) c Rise Time t - 130 195 r V = 125 V, R = 7.35 DD L ns c I 17 A, V = 10 V, R = 2.5 D GEN g Turn-Off Delay Time t -30 45 d(off) c Fall Time t - 100 150 f Source-Drain Diode Ratings and Characteristics (T = 25 C) C Pulsed Current I -- 20 A SM b Diode Forward Voltage V I = 17 A, V = 0 V - 0.9 1.5 V SD F GS Source-Drain Reverse Recovery Time t I = 17 A, dI/dt = 100 A/s - 115 175 ns rr F Notes a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 % c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2530-Rev. C, 29-Dec-14 Document Number: 72851 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000