New Product SUD19P06-60L Vishay Siliconix P-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ()I (A) Q (Typ) DS DS(on) D g 175 C Junction Temperature 0.060 at V = - 10 V - 19 GS RoHS - 60 26 COMPLIANT 0.077 at V = - 4.5 V - 16.8 GS TO-252 S G Drain Connected to Tab GD S Top View D Ordering Information: SUD19P06-60L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 19 C I Continuous Drain Current (T = 175 C) D J T = 125 C - 11 C A I Pulsed Drain Current - 30 DM Avalanche Current, Single Pulse I - 22 AS L = 0.1 mH a E 24.2 mJ Repetitive Avalanche Energy, Single Pulse AS c T = 25 C 46 C Power Dissipation P W D b, c T = 25 C 2.7 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 17 21 b R Junction-to-Ambient thJA Steady State 45 55 C/W R Junction-to-Case 2.7 3.25 thJC Notes: a. Duty cycle 1 %. b. When monuted on 1 square PCB (FR-4 material). c. See SOA curve for voltage derating. Document Number: 73103 www.vishay.com S-71660-Rev. B, 06-Aug-07 1New Product SUD19P06-60L Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min TypMaxUnit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 60 V (BR)DSS GS D V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS I V = - 60 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current - 50 A DSS DS GS J V = - 60 V, V = 0 V, T = 175 C - 150 DS GS J a I V = - 5 V, V = - 10 V On-State Drain Current - 30 A D(on) DS GS V = - 10 V, I = - 10 A 0.048 0.060 GS D V = - 10 V, I = - 16.8 A, T = 125 C 0.102 GS D J a r Drain-Source On-State Resistance DS(on) V = - 10 V, I = - 16.8 A, T = 175 C 0.129 GS D J V = - 4.5 V, I = - 5 A 0.061 0.077 GS D a g V = - 15 V, I = - 10 A 22 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1140 1710 iss Output Capacitance C V = 0 V, V = - 25 V, f = 1 MHz 130 pF oss GS DS C Reverse Transfer Capacitance 90 rss Total Gate Charge Q 26 40 g Q V = - 30 V, V = - 10 V, I = - 10 A Gate-Source Charge 4.5 nC gs DS GS D Gate-Drain Charge Q 7.0 gd R Gate Resistance f = 1 MHz 7.0 g c t Turn-On Delay Time 815 d(on) c t 915 Rise Time r V = - 30 V, R = 3 DD L ns c I - 19 A, V = - 10 V, R = 2.5 t D GEN g 65 100 Turn-Off Delay Time d(off) c t 30 45 Fall Time f b Drain-Source Body Diode Characteristics (T = 25 C) C I Continuous Current - 30 S A Pulsed Current I - 30 SM a V I = - 19 A, V = 0 V - 1.0 - 1.5 V Forward Voltage SD F GS t I = - 19 A, di/dt = 100 A/s Reverse Recovery Time 41 61 ns rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73103 2 S-71660-Rev. B, 06-Aug-07