SUD23N06-31 Vishay Siliconix N-Channel 60 V (D-S), MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.031 at V = 10 V 9.1 GS TrenchFET Power MOSFET 60 6.5 nC 0.045 at V = 4.5 V 7.6 100 % R and UIS Tested GS g Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 DC/DC Converters D G Drain Connected to Tab GD S S Top View Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 21.4 C T = 70 C 17.1 C Continuous Drain Current (T = 150 C) I J D a T = 25 C 9.1 A a T = 70 C 7.6 A A Pulsed Drain Current I 50 DM T = 25 C 20.8 C Continuous Source-Drain Diode Current I S a T = 25 C 3.8 A I 20 Single Pulse Avalanche Current AS L = 0.1 mH Avalanche Energy E 20 mJ AS T = 25 C 31.25 C T = 70 C 20 C Maximum Power Dissipation P W D a T = 25 C 5.7 A a T = 70 C 3.6 A T , T C Operating Junction and Storage Temperature Range - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a t 10 s R Maximum Junction-to-Ambient 18 22 thJA C/W Steady State R Maximum Junction-to-Case 3.2 4.0 thJC Notes: a. Surface mounted on 1 x 1 FR4 board, t 10 s. Document Number: 68857 www.vishay.com S11-0181-Rev. B, 07-Feb-11 1SUD23N06-31 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 V DS GS D V Temperature Coefficient V /T 65 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V, T = 70 C 20 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 15 A 0.025 0.031 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 10 A 0.037 0.045 GS D a Forward Transconductance g V = 15 V, I = 15 A 20 S fs DS D b Dynamic Input Capacitance C 670 iss Output Capacitance C V = 25 V, V = 0 V, f = 1 MHz 140 pF oss DS GS Reverse Transfer Capacitance C 60 rss V = 30 V, V = 10 V, I = 23 A 11 17 DS GS D Total Gate Charge Q g 6.5 13 nC Gate-Source Charge Q V = 30 V, V = 4.5 V, I = 23 A 3.0 gs DS GS D Gate-Drain Charge Q 3.0 gd Gate Resistance R f = 1 MHz 1.6 3.2 g Turn-On Delay Time t 18 30 d(on) Rise Time t 250 400 r V = 30 V, R = 1.3 DD L I 23 A, V = 4.5 V, R = 1 D GEN g Turn-Off Delay Time t 3555 d(off) Fall Time t 68 110 f ns Turn-On Delay Time t 815 d(on) Rise Time t 15 25 r V = 30 V, R = 1.3 DD L I 23 A, V = 10 V, R = 1 Turn-Off Delay Time t 30D GEN g 45 d(off) Fall Time t 25 40 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 20.8 S C A a Pulse Diode Forward Current I 50 SM Body Diode Voltage V I = 15 A 1.0 1.5 V SD S Body Diode Reverse Recovery Time t 30 60 ns rr Body Diode Reverse Recovery Charge Q 35 70 nC rr I = 15 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 20 a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68857 2 S11-0181-Rev. B, 07-Feb-11