TSM240N03CX6 30V N-Channel Power MOSFET SOT-26 Key Parameter Performance Pin Definition: 1. Drain 6. Drain Parameter Value Unit 2. Drain 5. Drain 3. Gate 4. Source V 30 V DS V = 10V 24 GS Note: R (max) m DS(on) V = 4.5V GS 34 MSL 1 (Moisture Sensitivity Level) per J-STD-020 Q 4.1 nC g Block Diagram Features Halogen-free Improved dV/dt capability Fast Switching Ordering Information Ordering code Package Packing TSM240N03CX6 RFG SOT-26 3kpcs / 7 Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (T = 25 unless otherwise noted) C Limit Parameter Symbol Unit 30 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS 6.5 T = 25 A C Continuous Drain Current I D 4.1 T = 100 A C (Note 1) 26 Pulsed Drain Current I A DM (Note 2) Single Pulse Avalanche Energy E 32 mJ AS Power Dissipation T = 25 P 1.56 W C D Operating Junction Temperature T 150 J -55 to +150 Storage Temperature Range T STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient R 80 /W JA 1/5 Version: B1811 TSM240N03CX6 30V N-Channel Power MOSFET Electrical Specifications (T = 25 unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS V = 10V, I = 6A GS D -- 17 24 Drain-Source On-State Resistance R m DS(on) V = 4.5V, I = 4A -- 22 34 GS D Gate Threshold Voltage V = V , I = 250A V 1.2 1.4 2.5 V DS GS D GS(TH) V = 30V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 24V, T = 125 -- -- 10 DS J Gate Body Leakage V = 20V, V = 0V I GS DS GSS -- -- 100 nA (Note 3) Forward Transconductance V = 10V, I = 4A g -- 6.5 -- S DS D fs Dynamic (Note 3,4) Total Gate Charge Q g -- 4.1 -- V = 15V, I = 6A, (Note 3,4) DS D Gate-Source Charge Q -- 1 -- nC gs V = 4.5V GS (Note 3,4) Gate-Drain Charge Q -- 2.1 -- gd Input Capacitance C -- 345 -- iss V = 25V, V = 0V, DS GS Output Capacitance C oss -- 55 -- pF f = 1.0MHz Reverse Transfer Capacitance C rss -- 32 -- Switching (Note 3,4) Turn-On Delay Time t -- 2.8 -- d(on) (Note 3,4) Turn-On Rise Time t r -- 7.2 -- V = 15V, I = 1A, DD D ns (Note 3,4) Turn-Off Delay Time V = 10V, R = 6 t GS GEN d(off) -- 15.8 -- (Note 3,4) Turn-Off Fall Time t -- 4.6 -- f Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- 6.5 A S Diode Forward Current Integral reverse diode in the MOSFET Maximum Pulse Drain-Source Diode I -- -- 26 A SM Forward Current Diode-Source Forward Voltage V = 0V, I = 1A V -- -- 1 V GS S SD Note: 1. Pulse width limited by safe operating area 2. L = 1mH, I = 8A, V = 25V, R = 25, Starting T = 25 AS DD G J 3. Pulse test: pulse width 300s, duty cycle 2% 4. Switching time is essentially independent of operating temperature. 2/5 Version: B1811