Green
DMNH6012SPS
60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary Features
I Max
D Rated to +175C Ideal for High Ambient Temperature
BV R Max
DSS DS(ON)
T = +25C
C
Environments
60V 11m @ V = 10V 50A
GS
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low R Minimizes Power Losses
DS(ON)
Low Q Minimizes Switching Losses
G
Description
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
This MOSFET is designed to minimize the on-state resistance
Halogen and Antimony Free. Green Device (Note 3)
(R ), yet maintain superior switching performance, making it
DS(ON)
Qualified to AEC-Q101 Standards for High Reliability
ideal for high efficiency power management applications.
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH6012SPSQ)
Applications Mechanical Data
Case: PowerDI 5060-8
Power Management Functions
Case Material: Molded Plastic, Green Molding Compound.
DC-DC Converters
UL Flammability Classification Rating 94V-0
Backlighting
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
D D
S
D
Pin1
D
S
G
G D
S
Top View
Top View Pin Configuration
Bottom View Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMNH6012SPS-13 PowerDI5060-8 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH6012SPS
Marking Information
=Manufacturers Marking
H6012SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 50
C
A
I
Continuous Drain Current (Note 6) V = 10V D
GS
30
T = +100C
C
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 120
I A
DM
Maximum Continuous Body Diode Forward Current (Note 6) I 2.6 A
S
Avalanche Current, L = 0.1mH (Note 7) I 45 A
AS
Avalanche Energy, L = 0.1mH (Note 7) E 100 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 1.6 W
D
Steady State 93
Thermal Resistance, Junction to Ambient (Note 5) C/W
R
JA
t<10s 51
Total Power Dissipation (Note 6) P 3.1 W
D
Steady State 49
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 26
C/W
Thermal Resistance, Junction to Case R 3.8
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
2 of 8
DMNH6012SPS April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38084 Rev. 3 - 2
NEW PRODUCT