AUIRFS4127 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology D V 200V Ultra Low On-Resistance DSS 175C Operating Temperature R typ. 18.6m DS(on) Fast Switching G Repetitive Avalanche Allowed up to Tjmax max 22m Lead-Free, RoHS Compliant S I 72A Automotive Qualified * D Description D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon S area. Additional features of this design are a 175C junction G operating temperature, fast switching speed and improved 2 D Pak repetitive avalanche rating . These features combine to make AUIRFS4127 this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 50 AUIRFS4127 2 AUIRFS4127 D -Pak Tape and Reel Left 800 AUIRFS4127TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 72 D C GS I T = 100C Continuous Drain Current, V 10V 51 A D C GS I Pulsed Drain Current 300 DM P T = 25C Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery 57 V/ns E Single Pulse Avalanche Energy (Thermally limited) 250 mJ AS I Avalanche Current A AR See Fig. 14, 15, 22a, 22b mJ E Repetitive Avalanche Energy AR T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG Soldering Temperature for 10 seconds 300(1.6mm from case) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.4 R JC C/W R Junction-to-Ambient 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRFS4127 Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 5mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 18.6 22 V = 10V, I = 44A m GS D DS(on) V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 79 S V = 50V, I = 44A DS D 20 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 3.0 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 100 150 I = 44A g D Q Gate-to-Source Charge 30 V = 100V gs DS nC Q Gate-to-Drain Mille) Charge 31 V = 10V GS gd Q Total Gate Charge Sync. (Q - Q) 69 sync g gd t Turn-On Delay Time 17 V = 130V d(on) DD t Rise Time 18 I = 44A r D ns t Turn-Off Delay Time 56 R = 2.7 d(off) G V = 10V t Fall Time 22 f GS C Input Capacitance 5380 V = 0V iss GS C Output Capacitance 410 V = 50V oss DS C Reverse Transfer Capacitance 86 pF = 1.0 MHz (See Fig. 5) rss C eff. (ER) Effective Output Capacitance (Energy Related) 360 V = 0V, V = 0V to 160V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 590 V = 0V, V = 0V to 160V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 72 S (Body Diode) showing the A Pulsed Source Current integral reverse I 300 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 44A, V = 0V SD J S GS 136 T = 25C J V = 100V, R t Reverse Recovery Time ns rr 139 T = 125C J I = 44A F 458 T = 25C J di/dt = 100A/s Q Reverse Recovery Charge nC rr 688 T = 125C J I Reverse Recovery Current 8.3 A T = 25C RRM J Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.26mH, R = 25 , I = 44A, V =10V. Part not recommended for use above this value. Jmax J G AS GS I 44A, di/dt 760A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. R is measured at T approximately 90C. J R value shown is at time zero. JC 2 2017-03-28