X-On Electronics has gained recognition as a prominent supplier of DMN2055U-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2055U-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN2055U-13 Diodes Incorporated

DMN2055U-13 electronic component of Diodes Incorporated
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Part No.DMN2055U-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 8V 24V SOT23 T&R 10K
Datasheet: DMN2055U-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.308 ea
Line Total: USD 0.31 
Availability - 76272
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.0742
50 : USD 0.0728
150 : USD 0.0717
500 : USD 0.0706

76272
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.308
10 : USD 0.209
100 : USD 0.1089
1000 : USD 0.088
2500 : USD 0.0781
10000 : USD 0.0671
20000 : USD 0.0616
100000 : USD 0.0605

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMN2055U-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2055U-13 and other electronic components in the MOSFETs category and beyond.

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DMN2055U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 38m V = 4.5V 4.8A GS 20V Low Input/Output Leakage 45m V = 2.5V 4.5A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SOT23 resistance (R ) and yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic, Green Molding Compound. making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Applications e3 Solderable per MIL-STD-202, Method 208 General Purpose Interfacing Switch Terminals Connections: See Diagram Below Power Management Functions Weight: 0.008 grams (Approximate) SOT23 D D G G S S Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2055U-7 SOT23 3,000/Tape & Reel DMN2055U-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2055U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 4.8 A Continuous Drain Current (Note 6) I A D State 3.8 T = +85C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 25 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.8 W D Thermal Resistance, Junction to Ambient (Note 5) Steady State C/W R 162 JA Total Power Dissipation (Note 6) 1.2 W PD Thermal Resistance, Junction to Ambient (Note 6) Steady State R 113 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(TH) DS GS D 28 38 V = 4.5V, I = 3.6A GS D Static Drain-Source On-Resistance m R DS(ON) 32 45 V = 2.5V, I = 3.1A GS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 400 pF Ciss V = 10V, V = 0V, DS GS Output Capacitance 55 pF C oss f = 1.0MHz Reverse Transfer Capacitance 37 pF C rss Gate Resistance 3.7 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge Q 4.3 nC G V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.3 nC GS I = 6A D Gate-Drain Charge Q 4.8 nC GD Turn-On Delay Time t 2.8 ns D(ON) Turn-On Rise Time t 2.7 ns R V = 10V, V = 5V, DD GS Turn-Off Delay Time t 15.4 ns R = 1.7, R = 6 D(OFF) L G Turn-Off Fall Time 4.4 ns t F Reverse Recovery Time 6.8 ns t I = 1.0A, di/dt = 100A/s RR F Reverse Recovery Charge 1.2 nC Q I = 1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2055U March 2018 Diodes Incorporated www.diodes.com Document number: DS40487 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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