DMN2055U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 38m V = 4.5V 4.8A GS 20V Low Input/Output Leakage 45m V = 2.5V 4.5A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SOT23 resistance (R ) and yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic, Green Molding Compound. making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Applications e3 Solderable per MIL-STD-202, Method 208 General Purpose Interfacing Switch Terminals Connections: See Diagram Below Power Management Functions Weight: 0.008 grams (Approximate) SOT23 D D G G S S Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2055U-7 SOT23 3,000/Tape & Reel DMN2055U-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2055U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 4.8 A Continuous Drain Current (Note 6) I A D State 3.8 T = +85C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 25 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.8 W D Thermal Resistance, Junction to Ambient (Note 5) Steady State C/W R 162 JA Total Power Dissipation (Note 6) 1.2 W PD Thermal Resistance, Junction to Ambient (Note 6) Steady State R 113 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(TH) DS GS D 28 38 V = 4.5V, I = 3.6A GS D Static Drain-Source On-Resistance m R DS(ON) 32 45 V = 2.5V, I = 3.1A GS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 400 pF Ciss V = 10V, V = 0V, DS GS Output Capacitance 55 pF C oss f = 1.0MHz Reverse Transfer Capacitance 37 pF C rss Gate Resistance 3.7 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge Q 4.3 nC G V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.3 nC GS I = 6A D Gate-Drain Charge Q 4.8 nC GD Turn-On Delay Time t 2.8 ns D(ON) Turn-On Rise Time t 2.7 ns R V = 10V, V = 5V, DD GS Turn-Off Delay Time t 15.4 ns R = 1.7, R = 6 D(OFF) L G Turn-Off Fall Time 4.4 ns t F Reverse Recovery Time 6.8 ns t I = 1.0A, di/dt = 100A/s RR F Reverse Recovery Charge 1.2 nC Q I = 1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2055U March 2018 Diodes Incorporated www.diodes.com Document number: DS40487 Rev. 3 - 2