IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET DPAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET PG-TO 220 FP while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Features Increased MOSFET dv/dt ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Drain Very high commutation ruggedness Pin 2, Tab Easy to use/drive Pb-free plating, Halogen free mold compound *1 Gate Pin 1 Potential applications Source *1: Internal body diode Pin 3 PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max RDS(on),max 600 m Q 12 nC g.typ I 18 A D,pulse E 400V 1.8 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPB60R600P6 PG-TO263-3 IPP60R600P6 PG-TO220-3 6R600P6 see Appendix A IPD60R600P6 PG-TO252-3 IPA60R600P6 PG-TO220 FullPAK Final Data Sheet 1 Rev. 2.3, 2020-06-08600V CoolMOS P6 Power Transistor IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 12 Package Outlines . 13 Appendix A 17 Revision History 18 Trademarks . 18 Disclaimer 18 Final Data Sheet 2 Rev. 2.3, 2020-06-08