BSG0810NDI Product Summary Power Block Q1 Q2 Features V 25 25 V DS Dual asymmetric N-channel OptiMOS5 MOSFET R V =10 V 3 0.85 mW Logic level (4.5V rated) DS(on),max GS V =4.5 V 4 1.2 GS Pb-free lead plating RoHS compliant I 50 50 A D Optimized for high performance Buck converter (5) (4) 1) S1/D2 (VPhase) D1 (Vin) Qualified according to JEDEC for target applications Q1 (9) (3) S1/D2 (VPhase) (6) D1 (Vin) Halogen-free according to IEC61249-2-21 S1/D2 (VPhase) (7) (2) S1 (VPhase) Q2 (8) G2 (GLS) (1) G1 (GHS) Monolithic integrated Schottky like diode (10) S2 (GND) Top view Type Package Marking BSG0810NDI PG-TISON8-4 0810NDI 2) Maximum ratings, at T =25C, unless otherwise specified j Parameter Symbol Conditions Value Unit Q1 Q2 I T =70C,V =10 V Continuous drain current 50 50 A D C GS T =70C,V =4.5 V 50 50 C GS T =25C, A 31 50 3) V =4.5 V GS T =25C, A 19 39 4) V =4.5 V GS Pulsed drain current I T =70C 160 160 D,pulse C Q1: I =10A, D E Q2: I =20A, Avalanche energy, single pulse 30 90 mJ AS D R =25W GS Gate source voltage V T =25C 16 V GS j 3) P Power dissipation T =25C 6.25 6.25 W tot A 4) T =25 C 2.5 2.5 A T , T -55 ... 150 Operating and storage temperature C j stg 55/150/56 IEC climatic category DIN IEC 68-1 1) J-STD20 and JESD22 Rev.2.1 page 1 2016-03-08 BSG0810NDI Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Q1 - - 4.3 K/W thJC Thermal resistance, junction - case Q2 - - 1.8 R Q1 thJA Thermal resistance, junction - Application specific - - 20 2) 3) ambient board Q2 Q1 2 4) - - 50 6 cm cooling area Q2 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage Q1 6) V V =0V, I =1mA - - V (BR)DSS GS D 25 Q2 Q1 dV I =10mA, referenced Breakdown voltage temperature (BR)DSS D - 15 - mV/K coefficient /dT to 25C j Q2 Gate threshold voltage Q1 V V =V , I =250A 1.2 1.6 2 V GS(th) DS GS D Q2 I Zero gate voltage drain current Q1 - - 1 A DSS V =25V, V =0V, DS GS T =25C j Q2 - - 500 Q1 - - 100 V =20V, V =0V, DS GS T =125C j Q2 - 3 - mA I Gate-source leakage current Q1 GSS V =16V, V =0V - - 100 nA GS DS Q2 R Q1 - 3.2 4.0 mW DS(on) Drain-source on-state V =4.5V, I =20A GS D resistance Q2 - 1.0 1.1 Q1 - 2.4 3.0 V =10V, I =20A GS D Q2 - 0.7 0.9 R Gate resistance Q1 - 0.7 1.2 W G Q2 - 0.8 1.3 Transconductance Q1 g 47 94 - S fs V >2 I R , DS D DS(on)max I =20A D Q2 55 110 - 2) Remark: only one of both transistors active Rev.2.1 page 2 2016-03-08