DMTH3004LPSQ
Green
30V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary Features and Benefits
Low R Minimizes On-State Losses
DS(ON)
I Max
D
BV R Max
DSS DS(ON)
Excellent Q x R Product (FOM)
gd DS(ON)
T = +25C
C
Small Form Factor Thermally Efficient Package Enables Higher
3.8m @ V = 10V 145A
GS Density End Products
30V
100% Unclamped Inductive Switching Ensures More Reliability
6m @ V = 4.5V 115A
GS
Rated to +175C Ideal for High Ambient Temperature
Environments
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Case: POWERDI 5060-8
automotive applications. It is qualified to AEC-Q101, supported by a
Case Material: Molded Plastic,Gree Molding Compound.
PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Backlighting
Terminal Connections Indicator: See Diagram
Power Management Functions
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
DC-DC Converters Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI 5060-8
S D
Pin1
S
D
S D
D
G
Top View
Pin Configuration
Top View
Bottom View Internal Schematic
Ordering Information (Note 5)
Part Number Case Packaging
DMTH3004LPSQ-13 2,500/Tape & Reel
POWERDI 5060-8
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH3004LPSQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
+20
Gate-Source Voltage V V
GSS
-16
T = +25C 22
A
Continuous Drain Current (Note 6) A
ID
16
T = +100C
A
T = +25C 145
C
Continuous Drain Current (Note 7) A
I
D
103
T = +100C
C
Maximum Continuous Body Diode Forward Current I 100 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 180 A
DM
Avalanche Current, L=0.3mH I 27 A
AS
Avalanche Energy, L=0.3mH 110 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation P 136 W
D
Thermal Resistance, Junction to Ambient (Note 6) R 47
JA
C/W
Thermal Resistance, Junction to Case (Note 7) R 1.1
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 30 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 24V, V = 0V
DSS DS GS
V = 24V, V = 0V
DS GS
Zero Gate Voltage Drain Current (Note 9) I 10 A
DSS
T = +125C
J
V = +20V, V = 0V
GS DS
Gate-Source Leakage 100 nA
I
GSS
V = -16V, V = 0V
GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1 1.6 3 V
V V = V , I = 250A
GS(TH) DS GS D
3.3 3.8
V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
5 6 V = 4.5V, I = 7A
GS D
Diode Forward Voltage V 0.70 1 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 9) C 2370
iss
V = 15V, V = 0V,
DS GS
Output Capacitance (Note 9) C 1360 pF
oss
f = 1MHz
Reverse Transfer Capacitance (Note 9) C 240
rss
0.14 1.75
Gate Resistance 0.7
R V = 0V, V = 0V, f = 1MHz
g DS GS
SWITCHING CHARACTERISTICS (Note 9)
43.7
Total Gate Charge (V = 10V) Q
GS g
Gate-Source Charge 6.9 nC
Q V = 15V, I = 20A
gs DS D
Gate-Drain Charge 8
Q
gd
Turn-On Delay Time 6.2
t
D(ON)
Turn-On Rise Time 4.2
t V = 15V, V = 10V,
R DD GS
ns
Turn-Off Delay Time t 21 R = 3, R = 0.75
D(OFF) G L
Turn-Off Fall Time t 8
F
Body Diode Reverse Recovery Time t 25 ns
RR
I = 15A, dI/dt = 500A/s
F
Body Diode Reverse Recovery Charge Q 37 nC
RR
Notes: 6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air
conditions whilst operating in a steady state.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
PowerDI is a registered trademark of Diodes Incorporated.
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DMTH3004LPSQ December 2015
Diodes Incorporated
www.diodes.com
Document number: DS38443 Rev. 1 - 2
NEW PRODUCT
ADVANCE INFORMATION