SUD45P03-10 Vishay Siliconix P-Channel 30-V (D-S), MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs a V (V) R () I (A) DS DS(on) D RoHS 0.010 at V = - 10 V - 15 GS COMPLIANT - 30 0.018 at V = - 4.5 V - 12 GS S TO-252 G Drain Connected to Tab GD S D Top View P-Channel MOSFET Ordering Information: SUD45P03-10-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 15 A b I Continuous Drain Current D T = 100 C - 8 A A I Pulsed Drain Current - 100 DM I Continuous Source Current (Diode Conduction) - 15 S T = 25 C 70 C b P W Maximum Power Dissipation D b T = 25 C 4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b R 30 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case 1.8 thJC Notes: a. Calculated Rating for T = 25 C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings A and Typical Characteristics). b. Surface Mounted on FR4 board, t 10 s. Document Number: 70766 www.vishay.com S-81734-Rev. E, 04-Aug-08 1SUD45P03-10 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 DS GS D V V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3.0 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 125 C - 50 DS GS J V = - 5 V, V = - 10 V - 50 DS GS a I A On-State Drain Current D(on) V = - 5 V, V = - 4.5 V - 20 DS GS V = - 10 V, I = - 15 A 0.010 GS D a R V = - 10 V, I = - 15 A, T = 125 C 0.015 Drain-Source On-State Resistance DS(on) GS D J V = - 4.5 V, I = - 15 A 0.018 GS D a g V = - 15 V, I = - 15 A Forward Transconductance 20 S fs DS D b Dynamic Input Capacitance C 6000 iss C V = 0 V, V = - 25 V, f = 1 MHz Output Capacitance 1100 pF oss GS DS Reverse Transfer Capacitance C 700 rss c Q Total Gate Charge 90 150 g c Q V = - 15 V, V = - 10 V, I = - 45 A 20 nC Gate-Source Charge gs DS GS D c Q Gate-Drain Charge 16 gd c t 15 25 Turn-On Delay Time d(on) c t Rise Time V = - 15 V, R = 0.33 375 550 r DD L ns c I - 45 A, V = - 10 V, R = 2.4 t D GEN G 100 200 Turn-Off Delay Time d(off) c t Fall Time 140 250 f Source-Drain Diode Ratings and Characteristic T = 25 C C I Pulsed Current 100 A SM a V I = - 45 A, V = 0 V Diode Forward Voltage 1.0 1.5 V SD F GS t I = - 45 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 55 100 ns rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70766 2 S-81734-Rev. E, 04-Aug-08