SUD09P10-195 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.195 at V = - 10 V - 8.8 GS TrenchFET Power MOSFET - 100 11.7 0.210 at V = - 4.5 V - 8.5 GS 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Converters TO-252 S G Drain Connected to Tab GD S D Top View Ordering Information: SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V - 100 DS V V Gate-Source Voltage 20 GS T = 25 C - 8.8 C Continuous Drain Current (T = 150 C) I J D T = 70 C - 7.1 C A I Pulsed Drain Current - 15 DM I Avalanche Current - 18 AS a E L = 0.1 mH 16.2 mJ Single Avalanche Energy AS b T = 25 C C 32.1 a P Maximum Power Dissipation W D c T = 25 C 2.5 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R 50 Junction-to-Ambient (PCB Mount) thJA C/W R Junction-to-Case (Drain) 3.9 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). Document Number: 65903 www.vishay.com S10-0634-Rev. A, 22-Mar-10 1SUD09P10-195 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 100 DS DS D V V V = V , I = - 250 A Gate Threshold Voltage - 1 - 2.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = - 100 V, V = 0 V - 1 DS GS I V = - 100 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current - 50 A DSS DS GS J V = - 100 V, V = 0 V, T = 150 C - 250 DS GS J a I V - 10 V, V = - 10 V - 15 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.6 A 0.162 0.195 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 3.4 A 0.175 0.210 GS D a g V = - 15 V, I = - 3.6 A 12 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1055 iss Output Capacitance C V = 0 V, V = - 50 V, f = 1 MHz 65 pF oss GS DS C Reverse Transfer Capacitance 41 rss V = - 50 V, V = - 10 V, I = - 3.6 A 23.2 34.8 DS GS D c Q Total Gate Charge g 11.7 17.6 nC c Q Gate-Source Charge V = - 50 V, V = - 4.5 V, I = - 3.6 A 3.5 gs DS GS D c Q 4.8 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 1.2 5.7 11.5 g c t 714 Turn-On Delay Time d(on) c t Rise Time V = - 50 V, R = 17.2 12 18 r DD L ns c I - 2.9 A, V = - 10 V, R = 1 t D GEN g 33 50 Turn-Off Delay Time d(off) c t Fall Time 918 f b Drain-Source Body Diode Ratings and Characteristics T = 25 C C I Continuous Current - 8.8 S A I Pulsed Current - 15 SM a V I = - 2.9 A, V = 0 V Forward Voltage - 0.8 - 1.5 V SD F GS t Reverse Recovery Time 50 75 ns rr I I = - 2.9 A, dI/dt = 100 A/s Peak Reverse Recovery Current - 4 - 6 A RM(REC) F Q Reverse Recovery Charge 98 147 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65903 2 S10-0634-Rev. A, 22-Mar-10