X-On Electronics has gained recognition as a prominent supplier of SUA70060E-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUA70060E-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUA70060E-E3 Vishay

SUA70060E-E3 electronic component of Vishay
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See Product Specifications
Part No.SUA70060E-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V Vds 20V Vgs TO-220 FULLPAK
Datasheet: SUA70060E-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1
1000 : USD 0.9977
2000 : USD 0.9877
2500 : USD 0.9779
3000 : USD 0.9681
4000 : USD 0.9584
5000 : USD 0.9489
10000 : USD 0.9394
20000 : USD 0.9299
50000 : USD 0.9207
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.9586
10 : USD 1.7494
100 : USD 1.3929
250 : USD 1.3483
500 : USD 1.1254
1000 : USD 0.8859
2000 : USD 0.8324
N/A

Obsolete
0
MOQ : 10
Multiples : 1
10 : USD 0.6913
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SUA70060E-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUA70060E-E3 and other electronic components in the MOSFETs category and beyond.

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SUA70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Q / Q ratio < 1 optimizes switching gd gs 0.00610 at V = 10 V 56.6 GS characteristics 100 53.5 nC 0.00700 at V = 7.5 V 54.4 GS 100 % R and UIS tested g Material categorization: for definitions of compliance Thin-Lead TO-220 FULLPAK please see www.vishay.com/doc 99912 APPLICATIONS D Power supply - Secondary synchronous rectification - AC/DC switch-mode power supplies DC/DC converter G Power tools S D G Motor drive switch DC/AC inverter Ordering Information: S SUA70060E-E3 (lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 56.6 C Continuous Drain Current (T = 150 C) I J D T = 70 C 45.2 C A Pulsed Drain Current (t = 100 s) I 240 DM Avalanche Current I 50 AS a Single Avalanche Energy L = 0.1 mH E 125 mJ AS T = 25 C 39 C a Maximum Power Dissipation P W D T = 70 C 25 C Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT b Junction-to-Ambient (PCB Mount) R 60 thJA C/W Junction-to-Case (Drain) R 3.2 thJC Notes a. Duty cycle 1 %. b. When mounted on 1 square PCB (FR4 material). S16-1128-Rev. A, 06-Jun-16 Document Number: 65787 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUA70060E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 100 V, V = 0 V, T = 125 C - - 100 DSS DS GS J V = 100 V, V = 0 V, T = 150 C - - 2 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 50 - - A D(on) DS GS V = 10 V, I = 30 A - 0.00505 0.00610 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 20 A - 0.00540 0.00700 GS D a Forward Transconductance g V = 15 V, I = 30 A - 85 - S fs DS D b Dynamic Input Capacitance C - 3300 - iss Output Capacitance C V = 0 V, V = 50 V, f = 1 MHz - 1395 - pF oss GS DS Reverse Transfer Capacitance C -95- rss c Total Gate Charge Q - 53.5 81 g c Gate-Source Charge Q V = 50 V, V = 10 V, I = 30 A - 14.5 - nC gs DS GS D c Gate-Drain Charge Q -13.2- gd Gate Resistance R f = 1 MHz 0.9 1.9 3.8 g c Turn-On Delay Time t -13 26 d(on) c Rise Time t -22 44 r V = 50 V, R = 1.67 DD L ns I 30 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -2754 d(off) c Fall Time t -9 18 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 240 A SM a Forward Voltage V I = 30 A, V = 0 V - 0.86 1.4 V SD F GS Reverse Recovery Time t - 88 178 ns rr Peak Reverse Recovery Charge I I = 30 A, dI/dt = 100 A/s -5 10 A RM(REC) F Reverse Recovery Charge Q - 220 440 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1128-Rev. A, 06-Jun-16 Document Number: 65787 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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