STW24N60DM2 STMicroelectronics

STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 typ., 18 A FDmesh II Plus low Q g 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet production data Features TAB TAB V R DS DS(on) 2 Order codes I D 3 T max Jmax 1 2 3 STB24N60DM2 D PAK 2 1 STP24N60DM2 650 V 0.20 18 A TO-220 STW24N60DM2 Extremely low gate charge and input capacitance 3 2 Lower R x area vs previous generation 1 DS(on) TO-247 Low gate input resistance 100% avalanche tested Figure 1. Internal schematic diagram Zener-protected Extremely high dv/dt and avalanche D(2, TAB) capabilities Applications Switching applications G(1) Description These FDmesh II Plus low Q Power MOSFETs g with intrinsic fast-recovery body diode are produced using a new generation of MDmesh S(3) technology: MDmesh II Plus low Q . These g AM01476v1 revolutionary Power MOSFETs associate a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging 2 STB24N60DM2 D PAK Tape and reel STP24N60DM2 24N60DM2 TO-220 Tube STW24N60DM2 TO-247 March 2014 DocID025499 Rev 3 1/21 This is information on a product in full production. www.st.comContents STB24N60DM2, STP24N60DM2, STW24N60DM2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID025499 Rev 3