STW20NM50FD N-CHANNEL 500V - 0.22 - 20A TO-247 FDmesh Power MOSFET (with FAST DIODE) TYPE V R I DSS DS(on) D STW20NM50FD 500V <0.25 20 A TYPICAL R (on) = 0.22 DS HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED 3 LOW INPUT CAPACITANCE AND GATE CHARGE 2 LOW GATE INPUT RESISTANCE 1 TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS TO-247 DESCRIPTION The FDmesh associates all advantages of reduced on-resistance and fast switching with an intrinsic fast- recovery body diode. It is therefore strongly recom- mended for bridge topologies, in particular ZVS phase- INTERNAL SCHEMATIC DIAGRAM shift converters. APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 500 V DS GS V Drain-gate Voltage (R = 20 k) 500 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuos) at T = 25C 20 A D C I Drain Current (continuos) at T = 100C D C 14 A I ( ) Drain Current (pulsed) 80 A DM P Total Dissipation at T = 25C 214 W TOT C Derating Factor 1.42 W/C dv/dt(1) Peak Diode Recovery voltage slope 20 V/ns T Storage Temperature 65 to 150 C stg T Max. Operating Junction Temperature 150 C j ()Pulse width limited by safe operating area (1)I 20A, di/dt 400A/s, V V , T T SD DD (BR)DSS j JMAX. (*)Limited only by maximum temperature allowed June 2002 1/8STW20NM50FD THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.585 C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 10 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 700 mJ AS (starting T = 25 C, I = I , V = 35 V) j D AR DD ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 500 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V = Max Rating 1A DSS DS Drain Current (V = 0) GS V = Max Rating, T = 125 C 10 A DS C I Gate-body Leakage V = 30V 100 nA GSS GS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V , I = 250A 34 5 V GS(th) DS GS D R Static Drain-source On V = 10V, I = 10A 0.22 0.25 DS(on) GS D Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (1) Forward Transconductance V > I x R 9S fs DS D(on) DS(on)max, I = 10A D C Input Capacitance V = 25V, f = 1 MHz, V = 0 1380 pF iss DS GS C Output Capacitance 290 pF oss C Reverse Transfer 40 pF rss Capacitance C (2) Equivalent Output V = 0V, V = 0V to 400V 130 pF oss eq. GS DS Capacitance R Gate Input Resistance f=1 MHz Gate DC Bias=0 2.8 g Test Signal Level=20mV Open Drain 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. C is defined as a constant equivalent capacitance giving the same charging time as C when V increases from 0 to 80% oss eq. oss DS V . DSS 2/8