STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features R DS(on) Order codes V I DSS D max 3 3 2 1 STB18NM80 800 V < 0.295 17 A 1 DPAK (1) STF18NM80 800 V < 0.295 17 A TO-220FP STP18NM80 800 V < 0.295 17 A STW18NM80 800 V < 0.295 17 A 1. Limited only by maximum temperature allowed 3 3 2 2 1 100% avalanche tested 1 TO-220 Low input capacitance and gate charge TO-247 Low gate input resistance Application Figure 1. Internal schematic diagram Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmesh technology, which associates the multiple drain process with the company s PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche 3 characteristics. Utilizing STs proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to - V similar products on the market. Table 1. Device summary Order codes Marking Package Packaging STB18NM80 DPAK Tape and reel STF18NM80 TO-220FP 18NM80 STP18NM80 TO-220 Tube STW18NM80 TO-247 May 2012 Doc ID 15421 Rev 5 1/21 This is information on a product in full production. www.st.com 21Contents STB18NM80, STF18NM80, STP18NM80, STW18NM80 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 15421 Rev 5