STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.230 , 12 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 Features TAB TAB V R DSS DS(on) Type I D T max Jmax 3 2 3 3 2 1 1 2 STF16N65M5 1 TO-220FP TO-220 STI16N65M5 IPAK STP16N65M5 710 V < 0.279 12 A TAB STU16N65M5 STW16N65M5 3 2 3 1 Worldwide best R 2 DS(on) 1 IPAK Higher V rating DSS TO-247 High dv/dt capability Excellent switching performance Easy to drive Figure 1. Internal schematic diagram 100% avalanche tested 4 Applications Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is 3 combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- - V resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STF16N65M5 TO-220FP STI16N65M5 IPAK STP16N65M5 16N65M5 TO-220 Tube STU16N65M5 IPAK STW16N65M5 TO-247 October 2011 Doc ID 15210 Rev 4 1/20 www.st.com 20 Contents STF/I/P/U/W16N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 19 2/20 Doc ID 15210 Rev 4