X-On Electronics has gained recognition as a prominent supplier of STW10N105K5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW10N105K5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW10N105K5 STMicroelectronics

STW10N105K5 electronic component of STMicroelectronics
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Part No.STW10N105K5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STW10N105K5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
450: USD 2.1962 ea
Line Total: USD 988.29 
Availability - 0
MOQ: 450  Multiples: 450
Pack Size: 450
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 9.5046
10 : USD 8.2296
100 : USD 6.743
500 : USD 5.7401
1000 : USD 5.7088

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 30
30 : USD 3.1272
120 : USD 3.0114
300 : USD 2.8956
750 : USD 2.8956
1200 : USD 2.8956

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 600
Multiples : 600
600 : USD 2.5568

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.6352
10 : USD 3.6905
25 : USD 3.4915
100 : USD 3.024
500 : USD 2.5764
1000 : USD 2.1586

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.2785
5 : USD 3.5959
12 : USD 3.3923

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 450
Multiples : 450
450 : USD 2.1962
510 : USD 2.176
600 : USD 2.1546

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 7
Multiples : 7
7 : USD 3.7655
10 : USD 2.7842

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 3.6244
30 : USD 3.588
90 : USD 3.3826
300 : USD 3.1655
600 : USD 3.0407
750 : USD 2.9198
1200 : USD 2.6377
1500 : USD 2.4557
3000 : USD 2.2893
5400 : USD 2.236

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STW10N105K5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW10N105K5 and other electronic components in the MOSFETs category and beyond.

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STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TAB R DS(on) Order codes V I P DS D TOT max. STF10N105K5 30 W 3 3 2 2 1 STP10N105K5 1050 V 1.3 6 A 130 W 1 TO-220 STW10N105K5 130 W TO-220FP Industrys lowest R DS(on) 3 Industrys best figure of merit (FoM) 2 1 Ultra low gate charge TO-247 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description These very high voltage N-channel Power G(1) MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary S(3) AM01476v1 Order codes Marking Package Packaging STF10N105K5 10N105K5 TO-220FP Tube STP10N105K5 10N105K5 TO-220 Tube STW10N105K5 10N105K5 TO-247 Tube October 2014 DocID026932 Rev 2 1/18 www.st.com This is information on a product in full production. Contents STF10N105K5, STP10N105K5, STW10N105K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 TO-220 package mechanical data .................................................. 11 4.2 TO-247 package mechanical data .................................................. 13 4.3 TO-220FP package mechanical data .............................................. 15 5 Revision history ............................................................................ 17 2/18 DocID026932 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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