STV160NF03L N-CHANNEL 30V - 0.0019 - 160A PowerSO-10 STripFET POWER MOSFET TYPE V R I DSS DS(on) D STV160NF03L 30 V < 0.0028 160 A TYPICAL R (on) = 0.0019 DS 10 LOW THRESHOLD DRIVE 1 ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED PowerSO-10 VERY LOW GATE CHARGE LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The STV160NF03L represents the second gener- ation of Application Specific STMicroelectronics well established STripFET process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also trans- lates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency CONNECTION DIAGRAM (TOP VIEW) is crucial APPLICATIONS BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DC- DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V =0) 30 V DS GS V Drain-gate Voltage (R =20k) 30 V DGR GS V Gate- source Voltage 15 V GS I (**) Drain Current (continuos) at T = 25C 160 A D C I Drain Current (continuos) at T = 100C 113 A D C I ( ) Drain Current (pulsed) 640 A DM P Total Dissipation at T = 25C 210 W TOT C Derating Factor 1.4 W/C E (1) Single Pulse Avalanche Energy 1 J AS T Storage Temperature 65 to 175 C stg T Max. Operating Junction Temperature 175 C j (1) Starting T =25C , I =80A, V =20V j D DD ( ) Pulse width limited by safe operating area (**)Limited only maximum junction temperature allowed by PowerSO-10 November 2002 1/9 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STV160NF03L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.71 C/W Rthj-amb Thermal Resistance Junction-ambient Max 50 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 30 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V = Max Rating 1A DSS DS Drain Current (V =0) GS V = Max Rating, T = 125 C 10 A DS C I Gate-body Leakage V = 15 V 100 nA GSS GS Current (V =0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V =V ,I = 250A1V GS(th) DS GS D R Static Drain-source On V =10 V,I =80A 1.9 2.8 m DS(on) GS D Resistance V =10 V,I =45A 1.86 2.8 m GS D 2 3.8 m V =8V, I =80 A GS D 4 6.7 m V =5V, I =40 A GS D 6.4 m V =10V,I =80 A T =175C GS D j 7.8 m V =8V, I =80 A T =175C GS D j 12.8 m V =5V, I =40 A T =175C GS D j I On State Drain Current V >I xR 160 A D(on) DS D(on) DS(on)max, V =10V GS DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (1) Forward Transconductance V >I xR 210 S fs DS D(on) DS(on)max, I =80A D R Gate resistance V =0 V,f= 1MHz,V =0 0.5 g DS GS C Input Capacitance V =25V,f= 1MHz, V = 0 4700 pF iss DS GS Output Capacitance 1580 pF C oss Reverse Transfer 240 pF C rss Capacitance C Input Capacitance V =0 V,f= 1MHz,V =0 pF iss DS GS 6500 Output Capacitance pF C oss 9500 Reverse Transfer pF C rss 4000 Capacitance L Internal Source Inductance From the Lead End (6mm from 4nH S Package Body) to the Die Center Not Available on Surface Mounting L Internal Drain Inductance D Package 2/9 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)