STV200N55F3 STMicroelectronics

STV200N55F3 N-channel 55 V, 1.8 m , 200 A, PowerSO-10 STripFET Power MOSFET Features R DS(on) (1) Type V I DSS D max 10 STV200N55F3 55 V < 2.5 m 200 A 1 1. Current limited by package PowerSO-10 Conduction losses reduced Low profile, very low parasitic inductance Application Figure 1. Internal schematic diagram and Switching applications connection diagram (top view) Description This n-channel enhancement mode Power MOSFET is the latest refinement of STs STripFET process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STV200N55F3 200N55F3 PowerSO-10 Tape and reel March 2009 Rev 3 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s) Contents STV200N55F3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 5 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Obsolete Product(s) - Obsolete Product(s)