STW11NK100Z STMicroelectronics

STW11NK100Z STW11NK100Z N-channel 1000V - 1.1 - 8.3A - TO-247 Zener - Protected SuperMESH PowerMOSFET General features V DSS Type R I Pw DS(on) D ( Tjmax) STW11NK100Z 1000 V < 1.38 8.3 A 230W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized TO-247 Very low intrinsic capacitances Very good manufacturing repeatibility Description The SuperMESH series is obtained through an Internal schematic diagram extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications Switching application Order codes Part number Marking Package Packaging STW11NK100Z W11NK100Z TO-247 Tube July 2006 Rev 2 1/14 www.st.com 14Contents STW11NK100Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuit Package mechanical data . 10 4 Package mechanical data 11 5 Revision history . 13 2/14