STW19NM60N STMicroelectronics

STW19NM60N Automotive-grade N-channel 600 V, 0.26 typ., 13 A MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features V R DS DS(on) Order code I P D TOT ( T ) max. jmax STW19NM60N 650 V 0.285 13 A 110 W Designed for automotive applications and 3 AEC-Q101 qualified 2 1 100% avalanche tested TO-247 Low input capacitance and gate charge Low gate input resistance Applications Figure 1. Internal schematic diagram Switching applications 4 Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high 3 efficiency converters. - V Table 1. Device summary Order codes Marking Package Packaging STW19NM60N 19NM60N TO-247 Tube October 2013 DocID024392 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STW19NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID024392 Rev 2