STW19NM50N STMicroelectronics

STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 typ., 14 A MDmesh II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes V T R max I DS Jmax DS(on) D STF19NM50N 3 3 2 2 1 1 STP19NM50N 550 V 0.25 14 A TO-220FP TO-220 STW19NM50N 100% avalanche tested Low input capacitance and gate charge 3 2 Low gate input resistance 1 TO-247 Applications Figure 1. Internal schematic diagram Switching applications % 7 Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the * companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 0 Y Table 1. Device summary Order codes Marking Packages Packaging STF19NM50N TO-220FP STP19NM50N 19NM50N TO-220 Tube STW19NM50N TO-247 September 2013 DocID17079 Rev 2 1/18 This is information on a product in full production. www.st.comContents STF19NM50N, STP19NM50N, STW19NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 17 2/18 DocID17079 Rev 2