X-On Electronics has gained recognition as a prominent supplier of STW20NM50FD MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW20NM50FD MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW20NM50FD STMicroelectronics

STW20NM50FD electronic component of STMicroelectronics
STW20NM50FD STMicroelectronics
STW20NM50FD MOSFETs
STW20NM50FD  Semiconductors

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See Product Specifications
Part No. STW20NM50FD
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 214W; TO247
Datasheet: STW20NM50FD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 2.6949 ea
Line Total: USD 10.78 
Availability - 0
MOQ: 4  Multiples: 4
Pack Size: 4
Availability Price Quantity
0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 600
Multiples : 1
600 : USD 4.7825

0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 30
Multiples : 30
30 : USD 5.33
90 : USD 5.252
150 : USD 5.0125
450 : USD 4.9375
750 : USD 4.875

0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 600
Multiples : 600
600 : USD 5.1929

0
Ship by Fri. 28 Mar to Wed. 02 Apr
MOQ : 1
Multiples : 1
1 : USD 4.9341
10 : USD 4.3545
30 : USD 4.0114
100 : USD 3.6626
500 : USD 3.5013
1000 : USD 3.4301
2000 : USD 3.3907

0
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 9.5135
10 : USD 6.2571
25 : USD 5.9663
100 : USD 5.1741
500 : USD 4.5124
1000 : USD 4.2215

0
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 4.606
3 : USD 3.948
6 : USD 3.178
16 : USD 3.01

0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 6
Multiples : 1
6 : USD 11.0211
10 : USD 11.0144
25 : USD 6.3355
100 : USD 5.3479
250 : USD 4.7947
600 : USD 4.7921
3000 : USD 4.7268

0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 4
Multiples : 4
4 : USD 2.6949

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain Current
Gate-Source Voltage
Drain-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the STW20NM50FD from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW20NM50FD and other electronic components in the MOSFETs category and beyond.

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STW20NM50FD N-CHANNEL 500V - 0.22 - 20A TO-247 FDmesh Power MOSFET (with FAST DIODE) TYPE V R I DSS DS(on) D STW20NM50FD 500V <0.25 20 A TYPICAL R (on) = 0.22 DS HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED 3 LOW INPUT CAPACITANCE AND GATE CHARGE 2 LOW GATE INPUT RESISTANCE 1 TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS TO-247 DESCRIPTION The FDmesh associates all advantages of reduced on-resistance and fast switching with an intrinsic fast- recovery body diode. It is therefore strongly recom- mended for bridge topologies, in particular ZVS phase- INTERNAL SCHEMATIC DIAGRAM shift converters. APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 500 V DS GS V Drain-gate Voltage (R = 20 k) 500 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuos) at T = 25C 20 A D C I Drain Current (continuos) at T = 100C D C 14 A I ( ) Drain Current (pulsed) 80 A DM P Total Dissipation at T = 25C 214 W TOT C Derating Factor 1.42 W/C dv/dt(1) Peak Diode Recovery voltage slope 20 V/ns T Storage Temperature 65 to 150 C stg T Max. Operating Junction Temperature 150 C j ()Pulse width limited by safe operating area (1)I 20A, di/dt 400A/s, V V , T T SD DD (BR)DSS j JMAX. (*)Limited only by maximum temperature allowed June 2002 1/8STW20NM50FD THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.585 C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 10 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 700 mJ AS (starting T = 25 C, I = I , V = 35 V) j D AR DD ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 500 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V = Max Rating 1A DSS DS Drain Current (V = 0) GS V = Max Rating, T = 125 C 10 A DS C I Gate-body Leakage V = 30V 100 nA GSS GS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V , I = 250A 34 5 V GS(th) DS GS D R Static Drain-source On V = 10V, I = 10A 0.22 0.25 DS(on) GS D Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (1) Forward Transconductance V > I x R 9S fs DS D(on) DS(on)max, I = 10A D C Input Capacitance V = 25V, f = 1 MHz, V = 0 1380 pF iss DS GS C Output Capacitance 290 pF oss C Reverse Transfer 40 pF rss Capacitance C (2) Equivalent Output V = 0V, V = 0V to 400V 130 pF oss eq. GS DS Capacitance R Gate Input Resistance f=1 MHz Gate DC Bias=0 2.8 g Test Signal Level=20mV Open Drain 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. C is defined as a constant equivalent capacitance giving the same charging time as C when V increases from 0 to 80% oss eq. oss DS V . DSS 2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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