STW23NM50N STMicroelectronics

STB23NM50N, STF23NM50N STP23NM50N, STW23NM50N N-channel 500 V, 0.162 , 17 A TO-220, TO-220FP, TO-247, DPAK MDmesh II Power MOSFET Features V R DSS DS(on) Order codes I D ( Tjmax) max. 3 3 2 2 1 STB23NM50N 1 TO-220FP TO-220 STF23NM50N 550 V < 0.19 17 A STP23NM50N STW23NM50N 100% avalanche tested 3 3 2 1 1 Low input capacitance and gate charge DPAK TO-247 Low gate input resistance Application Figure 1. Internal schematic diagram Switching applications Description These devices are made using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging STB23NM50N DPAK Tape and reel STF23NM50N TO-220FP 23NM50N STP23NM50N TO-220 Tube STW23NM50N TO-247 May 2011 Doc ID 16913 Rev 4 1/21 www.st.com 21Contents STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Package mechanical data 15 6 Revision history . 16 2/21 Doc ID 16913 Rev 4