Product Information

PNM523T201E0

PNM523T201E0 electronic component of Prisemi

Datasheet
MOSFET N Channel 20V ±1A(Tj=150°C) 1.1V @ 1mA 250mO @ 650 mA,4.5V SC-75(SOT-523) RoHS

Manufacturer: Prisemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0336 ea
Line Total: USD 0.67

2910 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
2211 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 20
Multiples : 20

Stock Image

PNM523T201E0
Prisemi

20 : USD 0.0335
200 : USD 0.0272
600 : USD 0.0238
3000 : USD 0.0209
9000 : USD 0.0192
21000 : USD 0.0181

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
LoadingGif

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The Prisemi PNM523T201E0 is a N-channel MOSFET made with a SC-75 (SOT-523) package. It is a RoHS compliant device with a 20V ±1A drain-source voltage rating, a 1.1V @ 1mA gate-source voltage rating, and a 250mO @ 650 mA drain current rating, with an operating temperature of up to 150°C. It features fast on-state switching and low gate-source capacitance for improved efficiency. Quick turns on, low drive power, low on-state resistance, and fast switching times contribute to efficient power conversion in automotive, communication, and consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Shanghai Prisemi Elec

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