Product Information

PNMT30V6

PNMT30V6 electronic component of Prisemi

Datasheet
MOSFET N Trench 30V 5.8A 1.5V @ 250uA 40 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
Manufacturer: Prisemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0532 ea
Line Total: USD 0.53

3414 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
1784 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 10
Multiples : 10

Stock Image

PNMT30V6
Prisemi

10 : USD 0.0529
100 : USD 0.0433
300 : USD 0.0386
3000 : USD 0.0351
6000 : USD 0.0323
9000 : USD 0.0308

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The PNMT30V6 is an N-channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) manufactured by Prisemi. This MOSFET is designed with the latest in trench technology, and it is rated for a maximum voltage of 30V and a maximum current of 5.8A. At a voltage of 1.5V, it is capable of delivering 250uA, while at 5.8A it has a resistance of 40 mO. The PNMT30V6 is also RoHS compliant and is supplied in a SOT-23-3 package, which is one of the smallest packages available.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Prisemi may also be referenced as

Shanghai Prisemi Elec

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