Product Information

PNMT6N1B

PNMT6N1B electronic component of Prisemi

Datasheet
MOSFET N Trench 40V 3A 1.5V @ 250uA 4 Ω @ 200mA,4.5V DFN-6L (2*2) RoHS
Manufacturer: Prisemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1086 ea
Line Total: USD 0.54

2851 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
2648 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 5
Multiples : 5

Stock Image

PNMT6N1B
Prisemi

5 : USD 0.1106
50 : USD 0.0822
150 : USD 0.065
500 : USD 0.0587
3000 : USD 0.0537
6000 : USD 0.0513

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Prisemi"

Image Description
MB6S electronic component of Prisemi MB6S

Bridge Rectifiers 600V 500mA 1V @ 500mA MBS RoHS
Stock : 0

PSBD2FD30V01 electronic component of Prisemi PSBD2FD30V01

Schottky Barrier Diodes (SBD) DFN1006-2L RoHS
Stock : 9940

PSBD9D30V01 electronic component of Prisemi PSBD9D30V01

Schottky Barrier Diodes (SBD) SOD-923 RoHS
Stock : 7940

PES1JF electronic component of Prisemi PES1JF

Diodes - Rectifiers - Hyperfast SMAF RoHS
Stock : 2940

PSBD1DF40V1H electronic component of Prisemi PSBD1DF40V1H

Switching Diode 40V 1A 550mV @ 1A SOD-123F RoHS
Stock : 2960

PM7 electronic component of Prisemi PM7

Diodes - General Purpose 1kV 1A 1.1V @ 1A SMAF RoHS
Stock : 0

PSBD551V-30 electronic component of Prisemi PSBD551V-30

Schottky Barrier Diodes (SBD) SOD-323 RoHS
Stock : 0

PSBD2FD40V01 electronic component of Prisemi PSBD2FD40V01

Schottky Barrier Diodes (SBD) DFN1006-2L(0402) RoHS
Stock : 9900

PSBD520S-30 electronic component of Prisemi PSBD520S-30

Schottky Barrier Diodes (SBD) SOD-523 RoHS
Stock : 2850

PSBD1DF60V1H electronic component of Prisemi PSBD1DF60V1H

60V -55℃~+150℃@(Tj) 550mV@1A 300uA@60V 1A SOD-123FL Switching Diode ROHS
Stock : 0

More Products By Category "MOSFET"

Image Description
FDB6670AL electronic component of ON Semiconductor FDB6670AL

Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
Stock : 81

2N7000-G electronic component of Microchip 2N7000-G

Transistor: N-MOSFET; unipolar; 60V; 0.2A; TO92
Stock : 1

VN2106N3-G electronic component of Microchip VN2106N3-G

MOSFET N Trench 60V 300mA (Tj) 2.4V @ 1mA 6 Ω @ 75mA,5V TO-92 (TO-92-3) RoHS
Stock : 6850

BSS84TA electronic component of Diodes Incorporated BSS84TA

Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R
Stock : 88

NTNUS3171PZT5G electronic component of ON Semiconductor NTNUS3171PZT5G

MOSFET T1 20V P-CH SOT-1123
Stock : 8000

VN2222LL-G electronic component of Microchip VN2222LL-G

Transistor: N-MOSFET; unipolar; 60V; 0.75A; TO92
Stock : 1786

ZVN2106A electronic component of Diodes Incorporated ZVN2106A

MOSFET Transistor - N Channel - 450 mA - 60 V - 2 ohm - 10 V - 2.4 V.
Stock : 881

ZVN3306FTA electronic component of Diodes Incorporated ZVN3306FTA

MOSFET Transistor - N Channel - 150 mA - 60 V - 5 ohm - 10 V - 2.4 V.
Stock : 69000

FDJ1028N electronic component of ON Semiconductor FDJ1028N

20V N-Channel 2.5Vgs Specified PowerTrench® MOSFET
Stock : 2805

RM40P40LD-T electronic component of Rectron RM40P40LD-T

MOSFET D-PAK MOSFET
Stock : 3984

Additional Infomation About Product

The PNMT6N1B is a MOSFET N Trench 40V 3A 1.5V @ 250uA 4 Ω @ 200mA, 4.5V DFN-6L (2*2) RoHS manufactured by Prisemi. This is an n-channel field-effect transistor, which has voltage and current capabilities suitable for low-power applications. It features a low threshold voltage and low on-resistance with internal diode to protects the device from reverse voltages. Its ratio of rdson/Rds typical is 40V/0.11 mΩ, and it has a package size of 2*2 mm. The PNMT6N1B is compliant with RoHS regulation and is suitable for use in automotive, telecommunication, and low power/low current applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Prisemi may also be referenced as

Shanghai Prisemi Elec

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted