X-On Electronics has gained recognition as a prominent supplier of PNMT6N1B MOSFETs across the USA, India, Europe, Australia, and various other global locations. PNMT6N1B MOSFETs are a product manufactured by Prisemi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PNMT6N1B Prisemi

Name: PNMT6N1B
Brand: Prisemi
SKU: PNMT6N1B_Prisemi
Availability: InStock
Rating: 5 (11 reviews)

PNMT6N1B electronic component of Prisemi

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See Product Specifications

Part No.	PNMT6N1B
Manufacturer:	Prisemi
Category:	MOSFETs
Description:	MOSFET N Trench 40V 3A 1.5V @ 250uA 4 Î© @ 200mA,4.5V DFN-6L (2*2) RoHS
Datasheet:	PNMT6N1B Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.0944 ea
Line Total: USD 0.47

Availability - 2428
Ship by Mon. 09 Dec to Thu. 12 Dec

MOQ: 5 Multiples: 5
Pack Size: 5

PNMT6N1B More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2428

Ship by Mon. 09 Dec to Thu. 12 Dec

MOQ : 5
Multiples : 5

5 : USD 0.0944
50 : USD 0.0771
150 : USD 0.0684
500 : USD 0.0618
3000 : USD 0.0566
6000 : USD 0.0541

Specifications

Manufacturer
Prisemi Prisemi

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
DFN - 6L (2*2) DFN - 6L (2*2)

Brand Category
Prisemi Prisemi

Fet Type
n trench n trench

Drain To Source Voltagevdss
40 V 40 V

Continuous Drain Current Id @ 25°C
3 A 3 A

Vgsth Max @ Id
1.5 V @ 250ua 1.5 V @ 250ua

Rds On Max @ Id Vgs
4 @ 200ma,4.5v 4 @ 200ma,4.5v

Power Dissipation-Max Ta
1.2 W 1.2 W

Drain Source Voltage Vdss
40 V 40 V

Continuous Drain Current Id
3 A 3 A

Drain Source On Resistance Rdson@Vgs Id
4 Ohms @4.5V , 200mA 4 Ohms @4.5V , 200mA

Power Dissipation Pd
1.2 W 1.2 W

Gate Threshold Voltage Vgsth@Id
1.5 V @250uA 1.5 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

PNMT6N1B Alternative Parts

We are delighted to provide the PNMT6N1B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PNMT6N1B and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The PNMT6N1B is a MOSFET N Trench 40V 3A 1.5V @ 250uA 4 Î© @ 200mA, 4.5V DFN-6L (2*2) RoHS manufactured by Prisemi. This is an n-channel field-effect transistor, which has voltage and current capabilities suitable for low-power applications. It features a low threshold voltage and low on-resistance with internal diode to protects the device from reverse voltages. Its ratio of rdson/Rds typical is 40V/0.11 mÎ©, and it has a package size of 2*2 mm. The PNMT6N1B is compliant with RoHS regulation and is suitable for use in automotive, telecommunication, and low power/low current applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2428 Ship by Mon. 09 Dec to Thu. 12 Dec MOQ : 5 Multiples : 5	5 : USD 0.0944 50 : USD 0.0771 150 : USD 0.0684 500 : USD 0.0618 3000 : USD 0.0566 6000 : USD 0.0541

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