Product Information

PNMT8N1

PNMT8N1 electronic component of Prisemi

Datasheet
MOSFET N Channel 20V 300mA 1.1V @ 1mA 500mO @ 300mA,4V DFN3*2*0.75 RoHS

Manufacturer: Prisemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1002 ea
Line Total: USD 0.5

2478 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1387 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

PNMT8N1
Prisemi

5 : USD 0.092
50 : USD 0.0694
150 : USD 0.0547
500 : USD 0.0493
3000 : USD 0.0448
6000 : USD 0.0428

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The PNMT8N1 is a MOSFET N Channel 20V 300mA 1.1V @ 1mA 500mO @ 300mA,4V DFN3*2*0.75 RoHS manufactured by Prisemi. This part is a low threshold voltage, high current MOSFET for use in Compact switch mode power supplies, PWM switching and power regulation applications. It has an electrical connection of drain-source, gate-source, and gate-drain. It has a breakdown voltage of 20V, a maximum drain current of 300mA, a maximum drain-source voltage of 1.1V @ 1mA, and a maximum rDS (on) of 500mO @ 300mA. It is designed to fit into 3mm x 2mm x 0.75mm small footprint DFN3 package and is compliant with the RoHS directive.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Shanghai Prisemi Elec

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