X-On Electronics has gained recognition as a prominent supplier of DMG2302UQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG2302UQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMG2302UQ-7 Diodes Incorporated

Name: DMG2302UQ-7
Brand: Diodes Incorporated
SKU: DMG2302UQ7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMG2302UQ-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMG2302UQ-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 27A
Datasheet:	DMG2302UQ-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.199 ea
Line Total: USD 0.2

Availability - 905
Ship by Fri. 28 Mar to Wed. 02 Apr

MOQ: 1 Multiples: 1
Pack Size: 1

DMG2302UQ-7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

905

Ship by Fri. 28 Mar to Wed. 02 Apr

MOQ : 1
Multiples : 1

1 : USD 0.199
10 : USD 0.1585
30 : USD 0.1362
100 : USD 0.1225
500 : USD 0.0856
1000 : USD 0.0807

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 23 - 3 SOT - 23 - 3

Brand Category

Diodes Incorporated Diodes Incorporated

Fet Type

- -

Drain To Source Voltagevdss

- -

Continuous Drain Current Id @ 25°C

- -

Vgsth Max @ Id

- -

Rds On Max @ Id Vgs

- -

Power Dissipation-Max Ta 25°C

- -

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

4.2 A 4.2 A

Power Dissipation Pd

800 mW 800 mW

Drain Source On Resistance Rdson@Vgs Id

90 mOhms @4.5V , 3.6A 90 mOhms @4.5V , 3.6A

Gate Threshold Voltage Vgsth@Id

1 V @50uA 1 V @50uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

DMG2302UQ-7 Alternative Parts

We are delighted to provide the DMG2302UQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMG2302UQ-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

DMG2302UQ-7 is an N-channel enhancement mode field-effect transistor (FET) manufactured by Diodes Incorporated. It is constructed with a vertical double-diffused structure, which ensures high performance over a wide temperature range. The FET has a 20V drain-source voltage (Vdss) and a 8V gate-source voltage (Vgss). Its maximum drain current is 27A. It is suitable for various applications such as power switching circuits, voltage regulation, load switching, and current sensing.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
905 Ship by Fri. 28 Mar to Wed. 02 Apr MOQ : 1 Multiples : 1	1 : USD 0.199 10 : USD 0.1585 30 : USD 0.1362 100 : USD 0.1225 500 : USD 0.0856 1000 : USD 0.0807

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